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	Sub-micron Sized Diamonds Prepared from Polycyclic Organic Compounds by HPHT Method 期刊论文 OAI收割 Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 2, 页码: 153-158 作者: Z.Li; J.-H.Zang; Q.Lou; X.-G.Yang; B.-S.Dong \| 收藏 \| 浏览/下载：32/0 \| 提交时间：2020/08/24 High pressure effects in solids,Catalysts,Diamonds,Grain size and shape,Naphthalene,Powder metals,Synthetic diamonds
	高精度遥感影像下农牧交错带小流域景观特征的粒度效应期刊论文 OAI收割生态学报, 2013, 卷号: 33, 期号: 24, 页码: 7739-7747 张庆印; 樊军收藏 \| 浏览/下载：27/0 \| 提交时间：2014/10/15 农牧交错带 farming-pastoral zone 景观格局 landscape pattern 粒度效应 effects of spatial grain size 临界粒度 critical grain size 相关分析 correlation analysis
	Grain size effects on the austenitization process in a nanostructured ferritic steel 期刊论文 OAI收割 Acta Materialia, 2011, 卷号: 59, 期号: 9, 页码: 3710-3719 L. M. Wang; Z. B. Wang; K. Lu 收藏 \| 浏览/下载：28/0 \| 提交时间：2012/04/13 Nanostructured Surface mechanical attrition treatment Ferritic steel Grain size effects Austenitization process mechanical attrition treatment severe plastic-deformation phase-transformation martensitic steel carbon-steel nanocrystalline materials nanometer-scale surface-layer tool steel refinement
	Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏 \| 浏览/下载：35/0 \| 提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.