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中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
长春光学精密机械与物... [1]
高能物理研究所 [1]
半导体研究所 [1]
合肥物质科学研究院 [1]
近代物理研究所 [1]
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OAI收割 [5]
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期刊论文 [4]
会议论文 [1]
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2022 [1]
2014 [2]
2011 [1]
1995 [1]
学科主题
Engineerin... [1]
光电子学 [1]
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Algorithm Research on the Conductor Eccentricity of a Circular Dot Matrix Hall High Current Sensor for ITER
期刊论文
OAI收割
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2022
作者:
Wu, Xu
;
Huang, Haihong
;
Peng, Lan
;
Huang, Ya
;
Wang, Yuhang
|
收藏
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浏览/下载:42/0
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提交时间:2022/12/23
Conductors
Current measurement
Signal processing algorithms
Measurement uncertainty
Heuristic algorithms
Temperature measurement
Sensitivity
Circular dot matrix Hall sensor
conductor eccentricity
conductor positioning
digital signal processing (DSP) conditioning
numerical integration
Magnetic Field Measurement for Synchrotron Dipole Magnets of Heavy-Ion Therapy Facility in Lanzhou
期刊论文
OAI收割
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2014, 卷号: 24
作者:
Yang, Wenjie
;
Zhang, Xiaoying
;
Han, Shaofei
;
Yang, Jing
;
Pei, Changping
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收藏
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浏览/下载:23/0
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提交时间:2018/07/05
Hall Probe Mapping
Integral Filed Homogeneity
Long Coil Integral Measurement
Magnetic Field Measurement
Magnetic Field Measurement of the Quadrupole and Sextupole Magnets for HLS-II Storage Ring
期刊论文
OAI收割
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2014, 卷号: 24, 期号: 3, 页码: 4002704
作者:
收藏
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浏览/下载:43/0
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提交时间:2016/04/08
Hall probe measurement
harmonics coils
higher order multipole
quadrupole & sextupole magnets
Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE)
会议论文
OAI收割
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.
;
Su S.
;
Yi X.
;
Mei T.
收藏
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浏览/下载:29/0
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提交时间:2013/03/25
A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural
electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing
and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance
Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications
Switzerland.
PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER
期刊论文
OAI收割
japanese journal of applied physics part 2-letters, 1995, 卷号: 34, 期号: 7b, 页码: l900-l902
HAO MS
;
LIANG JW
;
ZHENG LX
;
DENG LS
;
XIAO ZB
;
HU XW
收藏
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浏览/下载:33/0
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提交时间:2010/11/17
GAAS/SI
PHOTOLUMINESCENCE
AMORPHOUS SI
SIMS
HALL MEASUREMENT
DOUBLE CRYSTAL X-RAY
CHEMICAL VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
ON-SI
MOCVD
TEMPERATURE
MECHANISM
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