消息
×
loading..
中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共5条,第1-5条 帮助

条数/页: 排序方式:
Algorithm Research on the Conductor Eccentricity of a Circular Dot Matrix Hall High Current Sensor for ITER 期刊论文  OAI收割
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2022
作者:  
Wu, Xu;  Huang, Haihong;  Peng, Lan;  Huang, Ya;  Wang, Yuhang
  |  收藏  |  浏览/下载:42/0  |  提交时间:2022/12/23
Magnetic Field Measurement for Synchrotron Dipole Magnets of Heavy-Ion Therapy Facility in Lanzhou 期刊论文  OAI收割
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2014, 卷号: 24
作者:  
Yang, Wenjie;  Zhang, Xiaoying;  Han, Shaofei;  Yang, Jing;  Pei, Changping
  |  收藏  |  浏览/下载:23/0  |  提交时间:2018/07/05
Magnetic Field Measurement of the Quadrupole and Sextupole Magnets for HLS-II Storage Ring 期刊论文  OAI收割
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2014, 卷号: 24, 期号: 3, 页码: 4002704
作者:  
收藏  |  浏览/下载:43/0  |  提交时间:2016/04/08
Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE) 会议论文  OAI收割
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.; Su S.; Yi X.; Mei T.
收藏  |  浏览/下载:29/0  |  提交时间:2013/03/25
A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural  electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing  and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance  Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications  Switzerland.  
PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER 期刊论文  OAI收割
japanese journal of applied physics part 2-letters, 1995, 卷号: 34, 期号: 7b, 页码: l900-l902
HAO MS; LIANG JW; ZHENG LX; DENG LS; XIAO ZB; HU XW
收藏  |  浏览/下载:33/0  |  提交时间:2010/11/17
  • 首页
  • 上一页
  • 1
  • 下一页
  • 末页