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• 长春光学精密机械与物... [5]
• 上海光学精密机械研究... [5]
• 物理研究所 [2]
• 半导体研究所 [2]
• 上海微系统与信息技术... [1]

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• OAI收割 [15]

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• 期刊论文 [10]
• 会议论文 [5]

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• 2014 [4]
• 2011 [2]
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• 光电子学 [2]
• Crystallog... [1]
• 光学材料;晶体 [1]

筛选

浏览/检索结果: 共15条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Stimulated Brillouin scattering, phase noise, and dynamical evolution in a passive fiber laser coherent beam combination 期刊论文  OAI收割 j. opt. soc. am. b-opt. phys., 2014, 卷号: 31, 期号: 3, 页码: 464 作者:  Wang, Xiao-Jun 收藏  |  浏览/下载：27/0  |  提交时间：2016/11/28 HIGH AVERAGE POWER  OPTICAL-FIBERS  AMPLIFIERS  LOCKING   Stimulated Brillouin scattering, phase noise, and dynamical evolution in a passive fiber laser coherent beam combination 期刊论文  OAI收割 j. opt. soc. am. b-opt. phys., 2014, 卷号: 31, 期号: 3, 页码: 464 作者:  Wang, Xiao-Jun;  Tang, Xuan;  Ke, Wei-Wei;  Liu, Hou-Kang 收藏  |  浏览/下载：12/0  |  提交时间：2016/11/28 HIGH AVERAGE POWER  OPTICAL-FIBERS  AMPLIFIERS  LOCKING   Investigation on thermal properties of a new Nd-doped phosphate glass 期刊论文  OAI收割 ceram. int., 2014, 卷号: 40, 期号: 8, 页码: 13389 作者:  Li, Weiwei;  He, Dongbing;  Li, Shunguang;  Chen, Wei;  Hu, Lili 收藏  |  浏览/下载：36/0  |  提交时间：2016/11/28 Thermal expansion  Phosphate glass  Thermo-optic property  High average power laser   Investigation on thermal properties of a new Nd-doped phosphate glass 期刊论文  OAI收割 ceram. int., 2014, 卷号: 40, 期号: 8, 页码: 13389 作者:  Li, Weiwei;  He, Dongbing;  Li, Shunguang;  Chen, Wei;  Hu, Lili 收藏  |  浏览/下载：28/0  |  提交时间：2016/11/28 Thermal expansion  Phosphate glass  Thermo-optic property  High average power laser   High-efficiency 17 W, 80 MHz repetition rate, passively mode-locked TEM00 Nd:YAG oscillator pumped at 885 nm 期刊论文  OAI收割 LASER PHYSICS, 2011, 卷号: 21, 期号: 3, 页码: 435 Zhang, XF; Li, FQ; Zong, N; Le, XY; Cui, DF; Xu, ZY 收藏  |  浏览/下载：23/0  |  提交时间：2013/09/17 HIGH AVERAGE POWER  ND-YAG LASER  COMPOSITE CRYSTAL  SATURABLE ABSORBER  SESAM   Passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping 期刊论文  OAI收割 CHINESE OPTICS LETTERS, 2011, 卷号: 9, 期号: 4 Li, FQ; Zong, N; Wang, ZC; Han, L; Bo, Y; Peng, QJ; Cui, DF; Xu, ZY 收藏  |  浏览/下载：19/0  |  提交时间：2013/09/24 PUMPED NDYVO4 LASER  HIGH-AVERAGE-POWER  ND/YVO4 LASER  ND-YVO4  EFFICIENCY  OPERATION  END  NM   A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang L.;  Wang L.;  Wang L.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200m  150m and 100m-diameter  with the center spacings of 300m and 250m respectively. The maximum power is 880mW at a current of 4A  corresponding to lKW/cm2 average optical power density. The differential resistance is 0.09 with a threshold of 0.56A. The novel array is compared with a 300m-aperture-size single device and a 44 2-D array with 50m element aperture size and 250m centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power  threshold current  lasing spectra  far-field distribution etc. 2008 SPIE.   High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang X.;  Wang L.;  Wang L.;  Wang L.;  Wang Y. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle  the average driving power in the laser chip is quite low  so the heating effect cemiconductor laser is very small  using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.   High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology  the devices have been fabricated in experiment  and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W  and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.   Key issues associated with low threshold current density for InP-based quantum cascade lasers 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 301, 页码: 129-133 Li, AZ; Li, H; Xu, GY; Zhang, YG(张永刚）; Lin, C; Zhu, C; Wei, L; Li, YY 收藏  |  浏览/下载：22/0  |  提交时间：2012/03/24 CONTINUOUS-WAVE OPERATION  HIGH-AVERAGE-POWER  ROOM-TEMPERATURE  MU-M  PERFORMANCE