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	Electrochemical capacitive properties of all-solid-state supercapacitors based on ternary MoS2/CNTs-MnO2 hybrids and ionic mixture electrolyte 期刊论文 OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 780, 页码: 276-283 作者: Zhang, Jie; Sun, Jiangbo; Hu, Yan; Wang, Di; Cui, Yanbin \| 收藏 \| 浏览/下载：72/0 \| 提交时间：2019/04/03 All-solid-state supercapacitors Birnessite-MnO2 nanoparticles Mixed ionic liquids High voltage device Ternary MoS2/CNTs-MnO2 hybrids
	Field-line coupling interference prediction of LCD module in high-power TEA CO2 laser system (EI CONFERENCE) 会议论文 OAI收割 2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, August 23, 2012 - August 25, 2012, Changchun, China Ge X.; Li X. 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/03/25 In high power TEA CO2 laser system liquid crystal display (LCD) module is a key device for display and control functions. Because of laser's harsh electromagnetic environment LCD module coupled to the electromagnetic interference easily leading to not work normally. This paper analyzed the interference coupling mechanism. On the basis of the analysis results LCD module's field-line coupling is calculated by Taylor form's BLT equation. The calculation result is verified by experiment. The results show that due to the field-line coupling the data line of LCD module existed interference voltage interference voltage value is 1V. The interference voltage is larger than the LCD module's noise margin. LCD module must shield the interference. 2012 IEEE.
	Realization of 850 V breakdown voltage LDMOS on Simbond SOI 期刊论文 OAI收割 MICROELECTRONIC ENGINEERING, 2012, 卷号: 91, 页码: 102-105 Wang, ZJ; Cheng, XH; He, DW; Xia, C; Xu, DW; Yu, YH; Zhang, D; Wang, YY; Lv, YQ; Gong, DW; Shao, K 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/04/17 SOI Simbond High voltage device LDMOS
	Low drive-voltage and high-bandwidth electro-optic modulators based on BaTiO3 thin-film waveguides (EI CONFERENCE) 会议论文 OAI收割 Science and Technology of Dielectrics for Active and Passive Photonic Devices - 210th Electrochemical Society Meeting, October 29, 2006 - November 3, 2006, Cancun, Mexico Sun D. G.; Fu X. H.; Liu Z. F.; Ho S. T.; Wessels B. W. 收藏 \| 浏览/下载：45/0 \| 提交时间：2013/03/25 We investigated electro-optic modulator structures to target low drive voltage high-speed modulation and small device size with c-axis grown BaTiO3/MgO ferro-electric thin films. In this study the calculations are focused on the ideal thin film with a quadratic relation between the half-wave drive voltage V and the interaction length L in the electro-optic modulation case we obtained in previous work. With the quadratic electro-optic modulating relation and the optimal rib waveguide structure of BaTiO3/MgO thin films the frequency-voltage-size performances for 2.5GHz 10GHz 40GHz and 100GHz modulation bandwidths have been obtained under half-wave drive voltages of 0.8V 1.6V 3.0V and 4.8V respectively for the ideal film with r51=730 pm/V at 1550nm wavelength where both the phase velocity matching condition and the conductor induced microwave attenuation are considered. The required device lengths to achieve these four typical values of modulation bandwidth are 3.3 mm 0.8 mm 0.4 mm and 0.2 mm respectively. With the c-axis grown BaTiO3/MgO crystal thin films and the quadratic electro-optic modulating relation an electro-optic coefficient of reff=180 pm/V for the c-axis grown BaTiO3/MgO ferro-electric thin films was measured which is relatively far from the ideal value of r51=560 pm/V. copyright The Electrochemical Society.