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	Recent progresses on designing and manufacturing of bulk refractory alloys with high performances based on controlling interfaces 期刊论文 OAI收割 JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2020, 卷号: 52 作者: Zhang, T.; Deng, H. W.; Xie, Z. M.; Liu, R.; Yang, J. F. \| 收藏 \| 浏览/下载：49/0 \| 提交时间：2020/10/26 Interface controlling Designing and manufacturing Refractory alloys Structure and performance
	The Development of Visual Attention Controlling Aged From Children to Adult and Its Effect on Interface Design 会议论文 OAI收割 Computing, Control and Industrial Engineering (CCIE), 2010 International Conference on, Wuhan, 2010 作者: Zhang Xingli; Shi Jiannong; Liu Tongran 收藏 \| 浏览/下载：76/0 \| 提交时间：2014/06/17 development interface design visual attention controlling spatial cuing paradigm
	Design of CAN bus interface for photoelectric encoder in the spaceflight camera (EI CONFERENCE) 会议论文 OAI收割 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, November 19, 2008 - November 21, 2008, Chengdu, China 作者: Wan Q.-H.; She R.-H.; Sun Y.; Sun Y. 收藏 \| 浏览/下载：38/0 \| 提交时间：2013/03/25 In order to make photoelectric encoder usable in a spaceflight camera which adopts CAN bus as the communication method CAN bus interface of the photoelectric encoder is designed in this paper. CAN bus interface hardware circuit of photoelectric encoder consists of CAN bus controller SJA 1000 CAN bus transceiver TJA1050 and singlechip. CAN bus interface controlling software program is completed in C language. A ten-meter shield twisted pair line is used as the transmission medium in the spaceflight camera and speed rate is 600kbps.The experiments show that: the photoelectric encoder with CAN bus interface which has the advantages of more reliability real-time transfer rate and transfer distance overcomes communication line's shortcomings of classical photoelectric encoder system. The system works well in automatic measuring and controlling system. 2009 SPIE.
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：53/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.