机构

• 金属研究所 [1]
• 长春光学精密机械与物... [1]
• 化学研究所 [1]
• 过程工程研究所 [1]
• 中国科学院大学 [1]
• 长春应用化学研究所 [1]
• 更多

采集方式

• OAI收割 [5]
• iSwitch采集 [1]

内容类型

• 期刊论文 [5]
• 会议论文 [1]

发表日期

• 2021 [1]
• 2020 [1]
• 2016 [1]
• 2013 [2]
• 2006 [1]

学科主题

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Highly efficient Co3O4/CeO2 heterostructure as anode for lithium-ion batteries 期刊论文  OAI收割 JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2021, 卷号: 585, 页码: 705-715 作者:  Kang, Ying;  Zhang, Yu-Hang;  Shi, Qi;  Shi, Hongwei;  Xue, Dongfeng   |  收藏  |  浏览/下载：46/0  |  提交时间：2021/03/15 Co3O4/CeO2 heterostructure  One-step microwave strategy  Metal-organic framework  Anode  Lithium-ion battery   Morphology-controllable formation of MOF-Derived C/ZrO2 @1T-2H MoS2 heterostructure for improved electrocatalytic hydrogen evolution 期刊论文  OAI收割 INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2020, 卷号: 45, 期号: 29, 页码: 14831-14840 作者:  Hong, Liu;  Liu, Fangge;  Zang, Nan;  Jin, Wei   |  收藏  |  浏览/下载：24/0  |  提交时间：2020/07/10 Electrocatalytic hydrogen evolution  MoS2  Morphology controlling  Phase engineering  Metal-organic framework  Heterostructure   Novel organic-perovskite hybrid structure forward photo field effect transistor 期刊论文  iSwitch采集 Organic electronics, 2016, 卷号: 38, 页码: 158-163 作者:   收藏  |  浏览/下载：44/0  |  提交时间：2019/05/09 Thin film transistor  Organic-perovskite heterostructure  Photodetection  Responsivity  Mobility  Temperature dependent charge transport   Self-assembly of low dimensional nanostructures and materials via supramolecular interactions at interfaces 期刊论文  OAI收割 JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2013, 卷号: 397, 页码: 45-64 作者:  Zhou, Chunjie;  Li, Yongjun   |  收藏  |  浏览/下载：27/0  |  提交时间：2019/04/09 Inorganic-organic Heterostructure  Solid-liquid Interfaces  Self-assembly  Supramolecular Interactions   Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：33/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   Interfacial electronic structure of copper phthalocyanine and copper hexadecafluorophthalocyanine studied by photoemission 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 88, 期号: 17, 页码: 文献编号：173513 Lau KM; Tang JX; Sun HY; Lee CS; Lee ST; Yan DH 收藏  |  浏览/下载：22/0  |  提交时间：2010/08/17 FIELD-EFFECT TRANSISTORS  THIN-FILM TRANSISTORS  ORGANIC HETEROSTRUCTURE  HETEROJUNCTION