机构

• 长春光学精密机械与物... [1]
• 合肥物质科学研究院 [1]
• 近代物理研究所 [1]
• 兰州化学物理研究所 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2017 [2]
• 2011 [1]
• 2005 [1]

学科主题

• 材料科学与物理化学 [1]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Perspective on how laser-ablated particles grow in liquids 期刊论文  OAI收割 SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2017, 卷号: 60, 期号: 7, 页码: 1-16 作者:  Zhang, DongShi;  Liu, Jun;  Liang, ChangHao 收藏  |  浏览/下载：37/0  |  提交时间：2018/05/25 Laser Ablation In Liquids  Nanoparticle Growth Mechanism  Coalescence  Particle Attachment  Ostwald Ripening  Adsorbate-induced Growth  Reaction-induced Growth  Self-assembly  Self-splitting   Long-time atomistic dynamics through a new self-adaptive accelerated molecular dynamics method 期刊论文  OAI收割 JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 卷号: 29, 页码: 8 作者:  Gao, N.;  Yang, L.;  Gao, F.;  Kurtz, R. J.;  West, D.   |  收藏  |  浏览/下载：25/0  |  提交时间：2018/05/31 accelerated molecular dynamics  free energy surface  helium-vacancy cluster  Ostwald ripening mechanism  diffusion and growth   Selective synthesis and growth mechanism of CeVO4 nanoparticals via hydrothermal method 期刊论文  OAI收割 JOURNAL OF RARE EARTHS, 2011, 卷号: 29, 期号: 2, 页码: 97-100 刘凤珍; 邵鑫; 尹贻彬; 赵利民; 孙巧珍; 邵珠伟; 刘雪华; 孟宪华 收藏  |  浏览/下载：15/0  |  提交时间：2012/09/24 CeVO4  hydrothermal method  temperature  precursor solution concentration  Ostwald ripening mechanism  rare earths   Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文  OAI收割 Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time  the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration  the size of dots becomes larger and the density decreases  which is explained by virtue of the surface free energy.