中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共4条，第1-4条

帮助

条数/页：排序方式：
	Development of Constitutive Equation and Processing Maps for IN706 Alloy 期刊论文 OAI收割 ACTA METALLURGICA SINICA-ENGLISH LETTERS, 2014, 卷号: 27, 期号: 2, 页码: 198-204 作者: Huang Shuo; Wang Lei; Lian Xintong; Zhang Beijiang; Zhao Guangpu \| 收藏 \| 浏览/下载：20/0 \| 提交时间：2021/02/26 HOT DEFORMATION-BEHAVIOR DYNAMIC RECRYSTALLIZATION MICROSTRUCTURE EVOLUTION SUPERALLOY WORKING IN706 alloy Constitutive equation Power dissipation efficiency Flow instability Processing map
	Characteristics Of Energy Dissipation In Hyperconcentrated Flows 期刊论文 OAI收割 International Journal of Sediment Research, 2008, 卷号: 23, 期号: 4, 页码: 387-397 作者: Shu AP(舒安平); Liu QQ(刘青泉); Yi YJ; Zhang ZD 收藏 \| 浏览/下载：855/62 \| 提交时间：2009/08/03 Hyperconcentrated Flows Turbulence Energy Efficiency Coefficient Energy Dissipation Unit Stream Power Sediment Transport Capacity
	High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者: Zhang Y.; Liu Y.; Liu Y.; Liu Y.; Qin L. 收藏 \| 浏览/下载：36/0 \| 提交时间：2013/03/25 High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.
	A new driving method for LCoS with frame buffer pixels (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Song Y.; Ling Z. 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/03/25 A new driving method for LCoS microdisplays with frame buffer pixels was developed here. The power dissipation of the LCoS microdisplays with frame buffer pixels is higher than that of the LCoS with DRAM-like pixels due to the twice samplings in LCoS with frame buffer pixels. In this paper an adiabatic charging method was used to the second sampling of the frame buffer pixels in order to reduce the power dissipated in the transistors. The power dissipation of the second sampling was calculated when the power sources of the step the ramp and the stair-step are used respectively. The conventional design adopted the step and contributed to high power and so result in more heat to deteriorate the device performance. The power dissipated in the transistors is almost zero if the ideal ramp source is used. The ramp can be the stair-step whose steps are infinity. The stair-step substitutes for the ramp due to easily generation and higher energy efficiency than the step. It can decrease the power dissipation of the LCoS panel and contributes to the heat reduction caused by power dissipation which can increase the microdisplay devices reliability. This method was developed based on the frame buffer pixel circuits which we proposed previously and can be applied to the others.