机构

• 合肥物质科学研究院 [2]
• 长春光学精密机械与物... [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2018 [1]
• 2017 [1]
• 2005 [1]
• 1993 [1]

学科主题

• 半导体材料 [1]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Generation of reactive species in atmospheric pressure dielectric barrier discharge with liquid water 期刊论文  OAI收割 PLASMA SCIENCE & TECHNOLOGY, 2018, 卷号: 20, 期号: 4, 页码: 6 作者:  Zhang, Zelong;  Shen, Jie;  Cheng, Cheng;  Xu, Zimu;  Xia, Weidong   |  收藏  |  浏览/下载：26/0  |  提交时间：2019/06/10 atmosphere pressure dielectric barrier discharge plasma  gas-liquid discharge  electrical characteristics  reactive species   Bactericidal Effects of Plasma Induced Reactive Species in Dielectric Barrier Gas-Liquid Discharge 期刊论文  OAI收割 PLASMA CHEMISTRY AND PLASMA PROCESSING, 2017, 卷号: 37, 期号: 2, 页码: 415-431 作者:  Zhang, Zelong;  Xu, Zimu;  Cheng, Cheng;  Wei, Jun;  Lan, Yan 收藏  |  浏览/下载：37/0  |  提交时间：2018/07/04 Atmosphere Dielectric Barrier Discharge Plasma  Bacteria Inactivation  Bactericidal Efficiency  Initial Damage  Reactive Species   Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique (EI CONFERENCE) 会议论文  OAI收割 ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang X.;  Wang X.;  Wang X.;  Zheng X.;  Gao J. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 With reactive low voltage ion plating technique  ITO (indium oxide doped with tin) films were deposited on glass substrates by using ITO pellet with a composition of 90 wt.% In2O3 and 10 wt.% SnO2 without extra heating. The post annealing process was done in vacuum with different annealing temperature at 100  200  300 and 400C for 2 hours  respectively. The effects of vacuum annealing on structural  optical and electrical properties of the ITO film deposited by RLVIP were studied in detail. The results showed that the crystalline of the film was improved with the higher temperature. The increase of the annealing temperature improved the infrared reflectivity from 30% to 80% over 8-14m of the infrared atmosphere window  and a simultaneous variation in the optical transmission of the visible spectral region occurred. In addition  sheet resistance of ITO films had contrary changing trend with the IR reflectance  as well.   EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON 期刊论文  OAI收割 applied surface science, 1993, 卷号: 64, 期号: 3, 页码: 259-263 WONG YW; YANG XQ; CHAN PW; TONG KY 收藏  |  浏览/下载：175/0  |  提交时间：2010/11/15 REACTIVE ATMOSPHERE  BORON  IRRADIATION  SEMICONDUCTORS  JUNCTIONS