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	The methylation of aromatic nuclei - I: Implications for the geochemical evolution of gas 期刊论文 OAI收割 INTERNATIONAL JOURNAL OF COAL GEOLOGY, 2019, 卷号: 215, 页码: 11 作者: Liu, Yanhong; Wu, Yingqin; Xia, Yanqing; Xing, Lantian; Tian, Chuntao \| 收藏 \| 浏览/下载：48/0 \| 提交时间：2020/05/18 Aromatic nuclei Methylation process Natural gas Ratio of isoparaffin to n-alkane delta C-13(methane)
	Changes in carbon and nitrogen with particle size in bottom sediments in the Dan River, China 期刊论文 OAI收割 QUATERNARY INTERNATIONAL, 2015, 卷号: 380, 页码: 305-313 作者: Liu, Xiaojun; Li, Zhanbin; Li, Peng; Zhu, Bingbing; Long, Feifei 收藏 \| 浏览/下载：28/0 \| 提交时间：2016/01/19 Dan river Sediments Carbon and nitrogen Particle size Ratio of C/N
	Evaluation on nitrogen isotopes analysis in high-C/N-ratio plants using elemental analyzer/isotope ratio mass spectrometry 期刊论文 OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2014, 卷号: 25, 期号: 2, 页码: 20303 作者: Hu, J (Hu Jing)[ 1 ]; Liu, WG (Liu Wei-Guo)[ 1,2 ] \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2018/11/23 Nitrogen Isotopes Cupric Oxide O2 Flow Of Ea/irms High-c/n-ratio Plants Ea/irms
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	Fabrication and electron emission of carbon microtubes (EI CONFERENCE) 会议论文 OAI收割 Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, July 10, 2005 - July 14, 2005, Oxford, United kingdom 作者: Liu L.; Liu L.; Wang W.; Wang W. 收藏 \| 浏览/下载：46/0 \| 提交时间：2013/03/25 Carbon nanotubes have been attracting attention because of their unique physical properties and their application potential for field emission cathode. Carbon nanotubes possess the following properties favorable for field emission material such as a high aspect ratio and sharp tip high chemical stability high mechanical strength stable at high temperature. Some research works on carbon nanotubes field emitter and field emission display have been reported. Here a kind of carbon microtubes and its field emission properties are introduced. They have some different properties with carbon nanotubes and the density is lower than carbon nanotubes bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes are reported too. Carbon microtubes film is synthesized in liquid by electrolysis. The graphite plate is as anode and n-silicon substrate with resistivity of 4-8 cm is as cathode. The electrolysis current is about 5-8mA/cm2 and applied voltage is 800-1500V. Temperatures of the methanol base solution is maintained at 60C in process of deposition of carbon microtubes. Carbon microtubes film is observed by scanning electron microscopy(SEM) as shown in fig.1(a b). The wall's thickness of carbon microtube is about 60nm. The diameter of carbon microtube is about 0.8 m. Raman spectrum of carbon microtubes film shows the two peaks at 1342and 1560cm-1. The field emission properties of carbon microtubes are measured in high vacuum chamber(10-5Pa). The emission area of carbon microtubes is 0.5cm 0.5cm. The threshold of field emission of the carbon microtubes film is about 3.6V/ m. Field emission property of carbon microtubes film is shown in fig.2. Another when the electric field between anode and cathode is 10V/ m the electric field distribution on single carbon microtube is also given after calculation according to electric field theory. Fig 3 shows that electric field distribution vertical section on the of single carbon microtube top with 2 m of highness. These results may help us to understand field emission properties of carbon microtubes. According to research results it is found that liquidoid synthesis is simple method to produce carbon microtubes cold cathode material and the carbon microtubes have better field emission properties. 2005 IEEE.