机构

• 金属研究所 [1]
• 长春光学精密机械与物... [1]
• 武汉物理与数学研究所 [1]
• 半导体研究所 [1]
• 兰州化学物理研究所 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [4]
• 会议论文 [1]

发表日期

• 2014 [1]
• 2012 [1]
• 2009 [1]
• 2007 [1]
• 2000 [1]

学科主题

• 半导体材料 [1]
• 材料科学与物理化学 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A comparison study of the H + CH4 and H + SiH4 reactions with eight-dimensional quantum dynamics: normal mode versus local mode in the reactant molecule vibration 期刊论文  OAI收割 THEORETICAL CHEMISTRY ACCOUNTS, 2014, 卷号: 133, 期号: 10 作者:  Wang, Yan;  Li, Jun;  Guo, Hua;  Yang, Minghui 收藏  |  浏览/下载：34/0  |  提交时间：2015/06/24 Quantum dynamics  H + CH4  H + SiH4  Normal mode  Local mode   Theoretical Studies of the Reaction Paths and Rate Constants for SiH4 + H System 期刊论文  OAI收割 Asian Journal of Chemistry, 2012, 卷号: 24, 期号: 4, 页码: 1798-1804 作者:  Qi, Chuansong;  Sun XM(孙孝敏) 收藏  |  浏览/下载：17/0  |  提交时间：2016/04/27 Direct dynamics studies  Variational transition-state theory  H + SiH4 System  Ab initio potential energy surface  Rate constants   Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar 期刊论文  OAI收割 Journal of Materials Science & Technology, 2009, 卷号: 25, 期号: 4, 页码: 489-491 H. Cheng; A. M. Wu; J. Q. Xiao; N. L. Shi; L. S. Wen 收藏  |  浏览/下载：23/0  |  提交时间：2012/04/13 Poly-Si films  ECR-PECVD  Substrate temperature  Ar-dilution  chemical-vapor-deposition  ar-diluted sih4  microcrystalline silicon  optical-properties  h films  plasma  pecvd  hydrogen  silane   The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.   A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 245-249 Yu Z; Li DZ; Cheng BW; Huang CJ; Lei ZL; Yu JZ; Wang QM; Liang JW 收藏  |  浏览/下载：55/0  |  提交时间：2010/08/12 SiGe/Si  epitaxial growth  surface reaction kinetics  UHV/CVD system  CHEMICAL VAPOR-DEPOSITION  ATOMIC-HYDROGEN  ADSORPTION  SI(100)  SI2H6  SIH4  MECHANISMS  DESORPTION  PHASE  FILMS