机构

• 长春光学精密机械与物... [2]
• 长春应用化学研究所 [2]
• 兰州化学物理研究所 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [3]
• 会议论文 [2]

发表日期

• 2012 [1]
• 2010 [1]
• 2009 [2]
• 2006 [1]

学科主题

• 材料科学与物理化学 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Facile fabrication of a superamphiphobic surface on the copper substrate 期刊论文  OAI收割 Journal of Colloid and Interface Science, 2012, 卷号: 367, 页码: 443-449 作者:  Zhu XT(朱小涛);  Zhang ZZ(张招柱);  Xu XH(徐向辉);  Men XH(门学虎);  Yang J(杨进) 收藏  |  浏览/下载：19/0  |  提交时间：2013/07/12 Simple fabrication  Superhydrophobic  Superoleophobic  Controllable surface wettability  Solution-immersion process  Re-entrant texture   Bioinspired Green Synthesis of Nanomaterials and their Applications 期刊论文  OAI收割 current nanoscience, 2010, 卷号: 6, 期号: 5, 页码: 452-468 Gao SY; Li ZD; Zhang HJ 收藏  |  浏览/下载：24/0  |  提交时间：2012/04/25 ENHANCED RAMAN-SCATTERING  SIMPLE SOLUTION ROUTE  ZNO NANOROD ARRAYS  POLYCRYSTALLINE ZNO/TIO2 SYSTEMS  SEMICONDUCTOR QUANTUM DOTS  LIQUID-CRYSTALLINE PHASES  MESOPOROUS PLATINUM FILMS  LOW-TEMPERATURE SYNTHESIS  LARGE-SCALE FABRICATION  RETRACTED ARTICLE. SEE   Novel method for optimizing polishing tool-path in CCOS based on weighted-iterative algorithm (EI CONFERENCE) 会议论文  OAI收割 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, November 19, 2008 - November 21, 2008, Chengdu, China 作者:  Zhang X.-J.;  Wang X.;  Wang X.;  Wang X.;  Wang X.-K. 收藏  |  浏览/下载：41/0  |  提交时间：2013/03/25 In Computer Controlled Optical Surfacing (CCOS)  polishing tool-path is the base of solving other control parameters such as dwell time. In order to improve the fabrication results of polishing off-axis aspheric  a novel method to optimize the tool-path is discussed in this paper. The optimizing method named weighted-iterative algorithm is according to the balance principle of the particle system. The power factor of each dwell point represents the requirement of dwell density. Considering the factors which influence the polishing result  the power factors cosist of three elements include constant  error distribution and dwell distance of workpiece edge. The tool-path is solved by numerical iterative method. In the end  an error data is simulated with actual parameters using the matrix-based algorithm with two different tool-paths. The one is X-Y uniform spacing model and the other one is to optimize it based on the first. The comparison shows that the results of the optimized one are much better than traditional one  especially the rms convergence rate. Theory of the algorithm is simple and exercisable  and it satisfies practical requirement as well. 2009 SPIE.   Electrochemical Sensing and Biosensing Platform Based on Chemically Reduced Graphene Oxide 期刊论文  OAI收割 analytical chemistry, 2009, 卷号: 81, 期号: 14, 页码: 5603-5613 Zhou M; Zhai YM; Dong SJ 收藏  |  浏览/下载：236/28  |  提交时间：2010/05/27 GLASSY-CARBON ELECTRODES  PYROLYTIC-GRAPHITE  GLUCOSE BIOSENSORS  HYDROGEN-PEROXIDE  EPITAXIAL GRAPHENE  DIAMOND ELECTRODES  SIMPLE FABRICATION  DNA HYBRIDIZATION  NADH DETECTION  NANOTUBES   Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏  |  浏览/下载：32/0  |  提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.