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	ZnGeN2 and ZnGeN2:Mn2+ phosphors: hydrothermal-ammonolysis synthesis, structure and luminescence properties 期刊论文 OAI收割 journal of materials chemistry c, 2015, 卷号: 3, 期号: 36, 页码: 9306-9317 作者: Shang,Mengmeng; Wang,Jing 收藏 \| 浏览/下载：74/0 \| 提交时间：2016/05/12 LIGHT-EMITTING-DIODES TEMPERATURE-DEPENDENT EMISSION SOLID-SOLUTION PHOSPHORS MOLECULAR-BEAM EPITAXY OPTICAL-PROPERTIES YELLOW LUMINESCENCE WHITE LEDS PHOTOLUMINESCENCE PROPERTIES MN2&-ACTIVATED PHOSPHORS ELECTRONIC STATES
	Intense upconversion and infrared emissions in Er3+;Yb3+ codoped Lu2 Si O5 and (Lu0.5 Gd0.5)2 Si O5 crystals 期刊论文 OAI收割 appl. phys. lett., 2008, 卷号: 93, 期号: 1, 页码: 11110 Han Lin; Song Feng; Chen Shu-Qi; Zou Chang-Guang; Yu Xiao-Chen; Tian Jian-Guo; 徐军; 徐晓东; 赵广军收藏 \| 浏览/下载：1156/88 \| 提交时间：2009/09/24 American Institute of Physics (AIP) Co-doped Czochralski (CZ) method Emission cross sections Emission efficiencies Gain medium Infrared (IR) emissions Intense (CO) Laser crystals Luminescence processes Optical (PET) (OPET) Optical qualities Temperature dependent Up-conversion (UC)
	Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE) 会议论文 OAI收割 Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range from 80 to 300 K but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.
	Energy transfer processes on both Er+ ion concentration and excitation densities in Yb3+-Er3+ codoped LaF3 matrix (EI CONFERENCE) 会议论文 OAI收割作者: Zhang J.; Wang Y.; Wang Y.; Wang Y.; Zhang J. 收藏 \| 浏览/下载：20/0 \| 提交时间：2013/03/25 The effects of both Er3+ ion concentration and excited density upon frequency upconversion fluorescence emissions in Er3+/Yb 3+-codoped LaF3 powder are investigated. The results reveal that a higher Er3+ concentration can induce not only upconversion emission enhancements but also the changes among the relative intensities of the 407 519 539 and 651 nm radiation transitions as the samples are excited within the ranges of 20 to 700 mW with 978 nm laser diode (LD) as an excitation source. The changes are described by a schematic level model with the cross-relaxation processes between Er3+ ions and a series of dynamic equations that take into account the population of temperature dependent in Er3+. 2006 Elsevier B.V. All rights reserved.
	Photoluminescence and time-resolved photoluminescence of star-shaped ZnO nanostructures 期刊论文 OAI收割 SOLID STATE COMMUNICATIONS, 2006, 卷号: 139, 期号: 7, 页码: 355-359 作者: Li, C. P.; Guo, L.; Wu, Z. Y.; Ren, L. R.; Ai, X. C. \| 收藏 \| 浏览/下载：21/0 \| 提交时间：2019/04/09 Zno Stimulated Emission Temperature-dependent Photoluminescence Time-resolved Photoluminescence
	Photoluminescence and time-resolved photoluminescence of star-shaped ZnO nanostructures 期刊论文 OAI收割 SOLID STATE COMMUNICATIONS, 2006, 卷号: 139, 期号: 7, 页码: 355-359 作者: Li, CP; Guo, L; Wu ZY(吴自玉); Wu, ZY; Ren, LR 收藏 \| 浏览/下载：25/0 \| 提交时间：2016/06/27 ZnO stimulated emission temperature-dependent photoluminescence time-resolved photoluminescence
	Synthesis and photoluminescence properties of vertically aligned ZnO nanorod-nanowall junction arrays on a ZnO-coated silicon substrate 期刊论文 OAI收割 nanotechnology, 2006, 卷号: 17, 期号: 15, 页码: 3740-3744 Li C (Li Chun); Fang GJ (Fang Guojia); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong) 收藏 \| 浏览/下载：51/0 \| 提交时间：2010/04/11 TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE OPTICAL-PROPERTIES ZINC-OXIDE THIN-FILMS VAPOR-DEPOSITION SI SUBSTRATE NANOWIRES GROWTH EMISSION EPITAXY
	Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China 作者: Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：17/0 \| 提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.