机构

• 长春光学精密机械与物... [1]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [2]

内容类型

• 会议论文 [1]
• 期刊论文 [1]

发表日期

• 2020 [1]
• 2006 [1]

学科主题

筛选

浏览/检索结果: 共2条，第1-2条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A promising temperature sensor based on all-quantum-dot multilayer via layer-by-layer self-assembled method 期刊论文  OAI收割 OPTICAL MATERIALS, 2020, 卷号: 108 作者:  Liu, Ni;  Li, Shuxin;  Chen, Ligang;  Zheng, Wen   |  收藏  |  浏览/下载：29/0  |  提交时间：2020/12/28 Surface modification  LBL self-assembly  Temperature-dependent PL  Luminescence sensor   Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文  OAI收割 Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W. 收藏  |  浏览/下载：27/0  |  提交时间：2013/03/25 A set of ZnO/MgZnO heterostructures with well widths  Lw  varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton  while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness  the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.