中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
力学研究所 [1]
物理研究所 [1]
金属研究所 [1]
长春光学精密机械与物... [1]
新疆天文台 [1]
采集方式
OAI收割 [5]
内容类型
期刊论文 [4]
会议论文 [1]
发表日期
2021 [1]
2018 [1]
2013 [1]
2011 [1]
2008 [1]
学科主题
筛选
浏览/检索结果:
共5条,第1-5条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Photometric Study and Absolute Parameter Estimation of Six Totally Eclipsing Contact Binaries
期刊论文
OAI收割
Astronomical Journal, 2021, 卷号: 162, 期号: 1, 页码: 13
作者:
Li, Kai
;
Xia, Qi-Qi
;
Kim, Chun-Hwey
;
Gao, Xing
;
Hu, Shao-Ming
|
收藏
|
浏览/下载:28/0
|
提交时间:2022/06/30
low-mass-ratio
light-curve analysis
ursae-majoris system
thermal
relaxation oscillation
radial-velocity curves
flip-flop activity
short-period limit
rt leonis minoris
uma-type binaries
physical
parameters
Astronomy & Astrophysics
Numerical well test model for caved carbonate reservoirs and its application in Tarim Basin, China
期刊论文
OAI收割
JOURNAL OF PETROLEUM SCIENCE AND ENGINEERING, 2018, 卷号: 161, 页码: 611-624
作者:
Wan YZ
;
Liu YW(刘曰武)
;
Chen FF
;
Wu NY
;
Hu GW
|
收藏
|
浏览/下载:28/0
|
提交时间:2018/03/05
Caved Carbonate Reservoir
Type Curves
Numerical Well Test
Finite Element Method
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE)
会议论文
OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:
Zhang T.
收藏
|
浏览/下载:34/0
|
提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn
TMGa
AsH3
and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power
their temperatures were detected by a thermocouple
and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm
In0.82Ga0.18As absorption layer with the thickness of 2.8 m
and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied
the curves of the I-V characteristics
the range of response spectrum
and the detectivity (D*) were obtained. (2013) Trans Tech Publications
Switzerland.
Competition mechanism between microstructure type and inclusion level in determining VHCF behavior of bainite/martensite dual phase steels
期刊论文
OAI收割
International Journal of Fatigue, 2011, 卷号: 33, 期号: 3, 页码: 500-506
Y. Yu
;
J. L. Gu
;
F. L. Shou
;
L. Xu
;
B. Z. Bai
;
Y. B. Liu
收藏
|
浏览/下载:30/0
|
提交时间:2012/04/13
Bainite/martensite
Very high cycle fatigue
S-N curves
Microstructure
type
Inclusion level
high-strength steels
high-cycle fatigue
long-life fatigue
size
regime
Granularity and vortex dynamics in LaFeAsO0.92F0.08 probed by harmonics of the ac magnetic susceptibility
期刊论文
OAI收割
PHYSICAL REVIEW B, 2008, 卷号: 78, 期号: 22
Polichetti, M
;
Adesso, MG
;
Zola, D
;
Luo, JL
;
Chen, GF
;
Li, Z
;
Wang, NL
;
Noce, C
;
Pace, S
收藏
|
浏览/下载:21/0
|
提交时间:2013/09/17
HIGH-TEMPERATURE SUPERCONDUCTORS
ZRCUSIAS TYPE-STRUCTURE
DEPENDENCE
CURVES
FILMS
FIELD
首页
上一页
1
下一页
末页