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Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共10条,第1-10条 帮助

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UV light irradiation improves the aggregation and settling performance of metal sulfide particles in strongly acidic wastewater 期刊论文  OAI收割
WATER RESEARCH, 2019, 卷号: 163, 页码: -
作者:  
Peng, Xianjia;  Xia, Zhilin;  Kong, Linghao;  Hu, Xingyun;  Wang, Xianliang
  |  收藏  |  浏览/下载:49/0  |  提交时间:2020/09/10
Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing 期刊论文  OAI收割
Nanomaterials, 2019, 卷号: 9, 期号: 2, 页码: 9
作者:  
J.Zhao;  X.H.Ding;  J.H.Miao;  J.F.Hu;  H.Wan
  |  收藏  |  浏览/下载:16/0  |  提交时间:2020/08/24
Controlled synthesis of CdS micro/nano leaves with (0001) facets exposed: enhanced photocatalytic activity toward hydrogen evolution 期刊论文  OAI收割
JOURNAL OF MATERIALS CHEMISTRY, 2012, 卷号: 22, 期号: 45, 页码: 23815-23820
作者:  
Li, Cuixia;  Han, Lijun;  Liu, Rongji;  Li, Honghua;  Zhang, Suojiang
收藏  |  浏览/下载:24/0  |  提交时间:2013/10/11
Photocatalytic degradation of phenanthrene and pyrene on soil surfaces in the presence of nanometer rutile TiO2 under UV-irradiation 期刊论文  OAI收割
Chemical Engineering Journal, 2010, 卷号: 158, 期号: 3, 页码: 378-383
D. B. Dong, P. J. Li, X. J. Li, C. B. Xu, D. W. Gong, Y. Q. Zhang, Q. Zhao and P. Li
收藏  |  浏览/下载:28/0  |  提交时间:2012/11/02
Investigation on the photocatalytic degradation of pyrene on soil surfaces using nanometer anatase TiO2 under UV irradiation 期刊论文  OAI收割
Journal of Hazardous Materials, 2010, 卷号: 174, 期号: 1-3, 页码: 859-863
D. B. Dong, P. J. Li, X. J. Li, Q. Zhao, Y. Q. Zhang, C. Y. Jia and P. Li
收藏  |  浏览/下载:18/0  |  提交时间:2012/11/02
Photoelectrochemical treatment of landfill leachate in a continuous flow reactor 期刊论文  OAI收割
BIORESOURCE TECHNOLOGY, 2010, 卷号: 101, 期号: 3, 页码: 865-869
Zhao, Xu; Qu, Jiuhui; Liu, Huijuan; Wang, Chunxia; Xiao, Shuhu; Liu, Ruiping; Liu, Pengju; Lan, Huachun; Hu, Chengzhi
收藏  |  浏览/下载:29/0  |  提交时间:2015/07/31
Synthesis, size control and fluorescence studies of gold nanoparticles in carboxymethylated chitosan aqueous solutions 期刊论文  OAI收割
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2007, 卷号: 316, 期号: 2, 页码: 398-404
作者:  
Huang, Ling;  Zhai, Maolin;  Peng, Jing;  Xu, Ling;  Li, Jiuqiang
  |  收藏  |  浏览/下载:46/0  |  提交时间:2019/04/09
Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文  OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H.
收藏  |  浏览/下载:30/0  |  提交时间:2013/03/25
The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.  
A study of influence on TiO2 sol with UV irradiation 期刊论文  OAI收割
CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 2002, 卷号: 23, 期号: 10, 页码: 1956-1959
作者:  
Guan, ZS;  Yao, JN;  Ma, Y;  Song, YL;  Jiang, L
  |  收藏  |  浏览/下载:12/0  |  提交时间:2019/04/09
Photodegradation of dye pollutants on TiO2 pillared bentonites under UV light irradiation 期刊论文  OAI收割
SCIENCE IN CHINA SERIES B-CHEMISTRY, 2002, 卷号: 45, 期号: 4, 页码: 445-448
作者:  
Li, JY;  Chen, CC;  Zhao, JC;  Zhu, HY;  Ding, Z
  |  收藏  |  浏览/下载:18/0  |  提交时间:2019/04/09