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Heterovalent-Doping-Enabled Efficient Dopant Luminescence and Controllable Electronic Impurity Via a New Strategy of Preparing II-VI Nanocrystals 期刊论文  OAI收割
ADVANCED MATERIALS, 2015, 卷号: 27, 期号: 17, 页码: 2753—+
作者:  
Liu, J;  Zhao, Q;  Liu, JL;  Wu, YS;  Cheng, Y
收藏  |  浏览/下载:37/0  |  提交时间:2015/12/09
Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn 期刊论文  OAI收割
VACUUM, 2012, 卷号: 86, 期号: SI8, 页码: 1210-1214
作者:  
Zhang, RG;  Wang BY(王宝义);  Wei L(魏龙);  Wang, BY;  Wei, L
收藏  |  浏览/下载:20/0  |  提交时间:2016/04/08
ZnS/Zn2SnO4 biaxial nanowire heterostructures 期刊论文  OAI收割
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 42, 期号: 5, 页码: 1435
Shen, J; Ge, BH; Dong, HB; Zhang, N; Luo, SD; Ma, WJ; Duan, XF; Xie, SS; Zhou, WY
收藏  |  浏览/下载:27/0  |  提交时间:2013/09/23
Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO 期刊论文  OAI收割
MATERIALS CHEMISTRY AND PHYSICS, 2008, 卷号: 112, 期号: 2, 页码: 557-561
作者:  
Zhang, RG;  Wang BY(王宝义);  Wei L(魏龙);  Wang, BY;  Wei, L
收藏  |  浏览/下载:25/0  |  提交时间:2016/06/28
Fabrication of CdS-ZnS layered thin films by hydrothermal seeded growth method 期刊论文  OAI收割
thin solid films, 2006, 卷号: 513, 期号: 1-2, 页码: 99-102
作者:  
Ren, Tong;  Lei, Zhibin;  Luan, Guoyou;  Jia, Guoqing;  Zhang, Jing
收藏  |  浏览/下载:30/0  |  提交时间:2015/11/11
Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE) 会议论文  OAI收割
Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W.
收藏  |  浏览/下载:27/0  |  提交时间:2013/03/25
We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h  a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range  from 80 to 300 K  but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.  
Photoluminescence from ZnS1-xTex alloys under hydrostatic pressure 期刊论文  OAI收割
physical review b, 2002, 卷号: 66, 期号: 8, 页码: art.no.085203
Fang ZL; Li GH; Liu NZ; Zhu ZM; Han HX; Ding K; Ge WK; Sou IK
收藏  |  浏览/下载:52/0  |  提交时间:2010/08/12