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	Synthesis, characterization, and ethylene polymerization behaviors of late-transition metal complexes coordinated with chlorinated bis(arylimino)pyridine ligand 期刊论文 OAI收割 polymer, 2014, 卷号: 55, 期号: 18, 页码: 4611-4618 Liu, Heng; Wang, Feng; Liu, Li; Jai,Xiang-Yu; Zheng,Wenjie; Guo,Jun; Zhang,Chun-Yu; Bai,Chen-Xi; Hu,Yan-Ming; Zhang,Xue-Quan 收藏 \| 浏览/下载：34/0 \| 提交时间：2015/10/20 A series of late-transition metal complexes supported with chlorinated bis(arylimino)pyridine ligands [2 Ar = 2 Ar = 2 Ar = 2 Ar = 4-Cl-2 Ar = 4-Br-2 6-(ArN=CCl)(2)C5H3N]MtCl(2) (Ar = 2 6-(Pr2C6H3)-Pr-i 6-Et2C6H3 6-Me2C6H3 6-Me2C6H2 6-Me2C6H2 4 Mt = Fe (1b) Mt = Co (1c) Mt = Fe (1d) Mt = Fe (1e) Mt = Fe (1f) 6-Me3C6H2 Co (2b) Ni (3c) Co (2d) Co (2e) Co (2f)) were synthesized. At the presence of methylaluminoxane (MAO) Mt = Fe (1a) Fe(II)- and Co(II)- based complexes were highly active towards ethylene polymerization Co (2a) affording polymers with bimodal and unimodal molar. mass distributions Ni (3a) respectively while the Ni(II)-based complexes gave no polymer products. Moreover the obtained polyethylenes were predominately saturated and vinyl-terminated for Fe(II)- and Co(II)-based complexes respectively. Changing the ligand environment polymerization parameters also posed a great influence on the catalytic activities and the properties of the resulting polymers. (C) 2014 Elsevier Ltd. All rights reserved.
	一种治疗血栓性心脑血管疾病药物的化学全合成方法专利 OAI收割专利类型: 发明, 专利号: CN201010147871.8, 申请日期: 2011-04-20, 公开日期: 2011-04-20 史大永; 范晓; 卢伟伸; 郭书举; 李敬收藏 \| 浏览/下载：43/0 \| 提交时间：2014/08/04 一种治疗血栓性心脑血管疾病药物的化学全合成方法英文为：3?(2 其特征在于：所述的化合物合成路线为：(a)溴素与化合物1摩尔比为1∶1～1.1∶1 (b)碘甲烷与化合物2摩尔比为1∶1～1.5∶1 (c)80％水合肼 (d)高锰酸钾与化合物3摩尔比为1∶1～2∶1 (e)溴素与化合物5摩尔比为1.5∶1～3.5∶1 (f)化合物4∶化合物6摩尔比为1∶1 (g)N?溴代丁二酰亚胺与化合物7摩尔比为2.1∶1～2.5∶1 (h)碳酸钠 (i)硼氢化钠与化合物9摩尔比为0.5∶1～2∶1 (j)三溴化硼与化合物10摩尔比为6∶1～8∶1 化合物的化学结构式如下：化学名称中文为：3?(2 3?Dibromo?4 甲醇碳酸钾碳酸钾碳酸氢钠氢氧化钠三氟乙酸酐催化剂 1 乙醇二氯甲烷 3?二溴?4 5?dihydroxyphenyl)?4?bromo?5 冰水浴 N 二甘醇 60～80℃ 冰水浴 85％磷酸四氯化碳 4?二氧六环与水体积比为1∶1 室温 0℃～室温。FSA00000065604600011.tif 5?二羟基苯基)?4?溴?5 6?dihydroxy?1 N?二甲基甲酰胺 110～130℃ 0℃～室温回流 90～100℃ FSA00000065604600012.tif 6?二羟基?1 3?dihydroisobenzofuran 室温 3?二氢异苯并呋喃
	抗2型糖尿病药物“海普诺”的化学全合成方法专利 OAI收割专利类型: 发明, 专利号: CN200910017839.5, 申请日期: 2011-03-23, 公开日期: 2011-03-23 史大永; 郭书举; 李敬收藏 \| 浏览/下载：25/0 \| 提交时间：2014/08/04 一种抗2型糖尿病药物“海普诺”的化学全合成方法 (b)碘甲烷与化合物2摩尔比为1∶1～1∶1.5 (c)80％水合肼 (d)溴素与化合物3摩尔比为2∶1～3∶1 (e)硼氢化钠与化合物5摩尔比为1∶4～1∶3 (f)三氯化铝：化合物4：化合物6摩尔比为1∶1∶1 (g)N?溴代丁二酰亚胺与化合物7摩尔比为1.1∶1 (h)碳酸钾 (i)三溴化硼与化合物8摩尔比为6∶1～8∶1 (j)95％的乙醇其特征在于：所述的化合物合成路线为：(a)溴素与化合物1摩尔比为1∶1 碳酸钾氢氧化钾乙酸甲醇二氯甲烷催化剂 1 二氯甲烷 85％磷酸甲醇 N 二甘醇 60～70℃ 冰水浴室温四氯化碳 4?二氧六环与水体积比为1∶1 0℃ 70～80℃。F2009100178395C0000011.tif 冰水浴 N?二甲基甲酰胺 110～120℃ 光照 90～100℃ 室温
	The synthesis and field emission property of carbon nanotubes on carbon fibers substrate (EI CONFERENCE) 会议论文 OAI收割 Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, July 8, 2008 - July 12, 2008, Chicago, IL, United states Leyong Z.; Weibiao W.; Jingqiu L.; Yuxue X.; Da L.; Song C.; Haifeng Z. 收藏 \| 浏览/下载：33/0 \| 提交时间：2013/03/25 Using ferrocene as catalyst precursor C2H2 as carbon source carbon nanotubes (CNTs) with uniform density were synthesized on carbon fibers substrate by floating catalyst method. The morphology and microstructure were characterized by field emission scanning electron microscope (FESEM) and high-resolution transmission electron microscopy (HRTEM). The observation showed that the length of CNTs is about 2 m the average space between adjacent CNTs is about 300 nm and the diameter of CNT is about 45 nm. The less dense "short and stubby" aligned CNTs films should have good electron field emission characteristics. The results of field emission showed that the emission current of CNTs/carbon fibers was 5 A at the field of 2.5 V/m and the emission current can be 280 A with a field of 7 V/m (the specimen area is 0.25 cm2 and the distance between cathode and anode is 200 m). The calculation based on the F-N plot indicated that the field enhancement factor of CNTs tip is 499122. Using the conductivity and chemical stability of carbon fibers and the uniform and sparse density distribution of CNTs on carbon fibers substrate the tip predominance of carbon nanotubes can be exerted and simultaneously the effect of screening effects between adjacent carbon nanotubes on the field emission performance can also be effectively decreased. The CNTs synthesized on carbon fibers substrate has many predominances for the fabrication of cold cathode devices. For example using the removability of carbon fibers the cathode of CNTs/carbon fibers can be arbitrarily moved enlaced or combined to form different patterns and the cathode of CNTs/carbon fibers can be also fabricated in large size. Therefore CNTs/carbon fibers may have potential application in field emission displays.
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	Raman spectroscopy of a-C : H : N films deposited using ECR-CVD with mixed gas 期刊论文 OAI收割 Applied Surface Science, 2007, 卷号: 253, 期号: 16, 页码: 6957-6962 F. X. Liu; K. L. Yao; Z. L. Liu 收藏 \| 浏览/下载：64/0 \| 提交时间：2012/04/13 a-C : H : N Raman spectroscopy G peak dispersion hardness diamond-like carbon chemical-vapor-deposition amorphous-carbon tribological properties mechanical-properties thin-films coatings nitride ultraviolet spectra