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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [3]
长春光学精密机械与物... [1]
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OAI收割 [3]
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会议论文 [2]
期刊论文 [2]
发表日期
2010 [1]
2000 [3]
学科主题
半导体材料 [2]
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Structural and photoluminescence properties of aligned Sb-doped ZnO nanocolumns synthesized by the hydrothermal method (EI CONFERENCE)
会议论文
OAI收割
作者:
Wang X.
;
Wang X.
;
Wang X.
;
Li B.
;
Li B.
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  |  
浏览/下载:28/0
  |  
提交时间:2013/03/25
Aligned Sb-doped ZnO nanocolumns were synthesized by a simple hydrothermal method. Based on the analyses of the X-ray diffraction and photoluminescence result
it could be confirmed that the Sb has successfully doped in the ZnO crystal lattices to form an accepter energy level. At 85 K
the recombination of the acceptor-bound exciton was predominant in PL spectrum
which was attributed to the transition of the (SbZn-2VZn) complex bound exciton. The acceptor binding energy had been calculated to be 123 meV. 2009 Published by Elsevier B.V. All rights reserved.
Energy band and acceptor binding energy of gan and alxga1-xn
期刊论文
iSwitch采集
Materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 204-206
作者:
Xia, JB
;
Cheah, KW
;
Wang, XL
;
Sun, DZ
;
Kong, MY
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  |  
浏览/下载:25/0
  |  
提交时间:2019/05/12
Acceptor binding energy
Hole effective-mass hamiltonian
Wurtzite gan
Energy band and acceptor binding energy of GaN and AlxGa1-xN
会议论文
OAI收割
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Xia JB
;
Cheah KW
;
Wang XL
;
Sun DZ
;
Kong MY
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/11/15
acceptor binding energy
hole effective-mass Hamiltonian
wurtzite GaN
Energy band and acceptor binding energy of GaN and AlxGa1-xN
期刊论文
OAI收割
materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 204-206
Xia JB
;
Cheah KW
;
Wang XL
;
Sun DZ
;
Kong MY
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2010/08/12
acceptor binding energy
hole effective-mass Hamiltonian
wurtzite GaN