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浏览/检索结果: 共71条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Spontaneous quasi-periodic current self-oscillations in a weakly coupled GaAs/(Al,Ga)As superlattice at room temperature 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 24 作者:  Qin, H（秦华）;  Zhang, YH（张耀辉）;  Li, W（李文）;  Huang, YY（黄寓洋） 收藏  |  浏览/下载：19/0  |  提交时间：2014/01/15 GAAS-ALAS SUPERLATTICES  SEMICONDUCTOR SUPERLATTICES  ELECTRIC-FIELD DOMAINS  GAAS/ALAS SUPERLATTICES   Structural stability and half-metallicity of the zinc-blende phase of Al1-xCrxAs: Density-functional study 期刊论文  OAI收割 PHYSICAL REVIEW B, 2009, 卷号: 80, 期号: 22 Zhao, YH; Zhao, GP; Liu, Y; Liu, BG 收藏  |  浏览/下载：26/0  |  提交时间：2013/09/24 FERROMAGNETIC SEMICONDUCTORS  CURIE TEMPERATURES  ALAS  ALN  CR  1ST-PRINCIPLES  PNICTIDES  SYSTEMS  SPIN   Structures and phase transition of GaAs under pressure 期刊论文  OAI收割 Chinese Physics Letters, 2008, 卷号: 25, 期号: 6, 页码: 2169-2172 C. Hong-Ling; C. Xiang-Rong; J. Guang-Fu; W. Dong-Qing 收藏  |  浏览/下载：20/0  |  提交时间：2012/04/13 iii-v  electronic-structure  gallium-arsenide  semiconductors  stability  alas  iv  si   Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy 期刊论文  OAI收割 journal of applied physics, 2008, 卷号: 104, 期号: 1, 页码: art. no. 013106 Zhou, ZY; Tang, CG; Chen, YH; Wang, ZG 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08 FINE-STRUCTURE  QUANTUM-WELLS  GAAS/ALAS SUPERLATTICES  SEMICONDUCTORS  TEMPERATURE  HOLE   High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology  the devices have been fabricated in experiment  and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W  and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.   GaAs/AlAs DBR optimized growth by GSMBE and its characterization 期刊论文  OAI收割 RARE METAL MATERIALS AND ENGINEERING, 2007, 卷号: 36, 期号: 4, 页码: 587-591 Xie, ZS; Wu, HZ; Lao, YF; Liu, C; Cao, M 收藏  |  浏览/下载：18/0  |  提交时间：2012/03/24 SURFACE-EMITTING LASERS  REFRACTIVE-INDEX  WAFER FUSION  SUPERLATTICES  DESIGN  GAAS  ALAS   First-principles calculations for transition phase and thermodynamic properties of GaAs 期刊论文  OAI收割 Chinese Physics, 2006, 卷号: 15, 期号: 4, 页码: 802-806 L. Y. Lu; X. R. Chen; B. R. Yu; Q. Q. Gou 收藏  |  浏览/下载：25/0  |  提交时间：2012/04/13 transition phase  thermodynamic properties  GaAs  high-pressure  iii-v  structural-properties  electronic-structure  molecular-dynamics  gallium-arsenide  semiconductors  simulation  stability  alas   Current oscillation and dc-voltage-controlled chaotic dynamics in semiconductor superlattices 期刊论文  OAI收割 COMMUNICATIONS IN THEORETICAL PHYSICS, 2006, 卷号: 45, 期号: 2, 页码: 363-368 Wang, C; Lu, JT 收藏  |  浏览/下载：19/0  |  提交时间：2012/03/24 ELECTRIC-FIELD DOMAINS  DOPED GAAS/ALAS SUPERLATTICE  GAAS-ALAS SUPERLATTICES  SELF-OSCILLATIONS  SYNCHRONIZATION  TRANSPORT   Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文  OAI收割 nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211 作者:  Jin P;  Ye XL 收藏  |  浏览/下载：69/0  |  提交时间：2010/04/11 SCANNING-TUNNELING-MICROSCOPY  ANISOTROPY SPECTROSCOPY  GROWTH  GAAS  SURFACES  ALAS   Numerical simulation and experiment of novel semiconductor/superlattice distributed Bragg reflectors (EI CONFERENCE) 会议论文  OAI收割 Optical Transmission, Switching, and Subsystems III, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Zhao Y.;  Zhao Y.;  Zhao Y.;  Wang X.;  Wang X. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 We introduced a novel semiconductor/superlattice AlAs/(GaAs/AlAs) distributed Bragg reflector (DBR)  and the reflection spectrum of the DBR at 980nm wavelength is simulated by employing transfer matrix method. By adjusting the thickness of AlAs layer and the period of superlattice GaAs/AlAs  the DBR with center wavelength at 1500nm is also investigated theoretically. In experiment  this kind of DBR is grown on GaAs (100) substrate. From the measured reflection spectrum  the central wavelength is about 980 nm with high reflectivity.