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CAS IR Grid
机构
长春光学精密机械与物... [2]
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OAI收割 [2]
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会议论文 [2]
发表日期
2013 [1]
2005 [1]
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Centroid localization algorithm based on bicubic interpolation gray square weighted (EI CONFERENCE)
会议论文
OAI收割
2012 3rd International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2012, December 22, 2012 - December 23, 2012, Beihai, China
作者:
Zhou J.
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浏览/下载:152/0
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提交时间:2013/03/25
The 3D coordinates of measured point is embodied in 2D image coordinate of the optical characteristic point via the visual measurement system. Based on the gray square weighted centroid localization algorithm
the paper presents bicubic interpolation gray square weighted centroid localization algorithm
increases the number of effective pixels around the optical characteristic point imaging center
and reduces noise error via the gray square weighted
improves the imaging center location accuracy of optical characteristic point
realizes the accurate location of the optical characteristic points. Results indicate application of the proposed algorithm to location
the standard tolerance along the direction of x is 0.0022 Pixel
the standard tolerance along the direction of y is 0.0023 Pixel
compared with the others
the standard tolerance is minimum and discrete to a lesser degree distancing ideal image point
that is
the proposed algorithm has higher location accuracy. The maximum tolerance along the direction of x is 0.008 Pixel
the one along the direction of y is 0.007 Pixel
compared with the other two algorithms
the maximum tolerance is minimum.Results indicate that the stability of the proposed algorithm is better. (2013) Trans Tech Publications
Switzerland.
An LCoS microdisplay with new frame buffer pixel circuits (EI CONFERENCE)
会议论文
OAI收割
Second Americas Display Engineering and Applications Conference, ADEAC 2005, October 25, 2005 - October 27, 2005, Portland, OR, United states
Song Y.
;
Ling Z.
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提交时间:2013/03/25
In this paper we proposed novel frame buffer pixel circuits for LCoS microdisplays. The new pixel circuits were simulated and compared with others by SPICE. They can decrease the leakage current by minimizing the amount of transistors connecting with the pixel electrode in the voltage-holding period. And the PMOS charge-clear transistor is introduced firstly to simplify Interconnects of active matrix silicon backplane. The new pixel circuits have the advantages of high resistance to EMI
high voltage holding ratio under high Illumination and high temperature variance
less flick
and simple Interconnects.