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	Efficient and compact intracavity-frequency-doubled YVO4/Nd:YVO4/KTP laser through analysis of the interaction length 期刊论文 OAI收割 Optics Communications, 2010, 卷号: 283, 期号: 17, 页码: 3324-3327 F. J. Zhuang, Y. Q. Zheng, C. H. Huang, Y. Wei, H. Y. Zhu and G. Zhang 收藏 \| 浏览/下载：21/0 \| 提交时间：2012/11/02 CW lasers YVO4/Nd:YVO4 composite crystal Diode end pumping Second harmonic generation continuous-wave diode-laser 532 nm crystal nd
	Efficient and compact intracavity-frequency-doubled YVO4/Nd:YVO4/KTP laser through analysis of the interaction length 期刊论文 OAI收割 Optics Communications, 2010, 卷号: 283, 期号: 17, 页码: 3324-3327 F. J. Zhuang, Y. Q. Zheng, C. H. Huang, Y. Wei, H. Y. Zhu and G. Zhang 收藏 \| 浏览/下载：15/0 \| 提交时间：2012/11/02 CW lasers YVO4/Nd:YVO4 composite crystal Diode end pumping Second harmonic generation continuous-wave diode-laser 532 nm crystal nd
	Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE) 会议论文 OAI收割 Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China 作者: Qin L. 收藏 \| 浏览/下载：30/0 \| 提交时间：2013/03/25 By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current efficiency emission wavelength and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results it is shown that the device can still operate at high temperature condition.
	Continuous-wave and passively mode-locked Yb : GYSO lasers pumped by diode lasers 期刊论文 OAI收割 ieee j. quantum electron., 2008, 卷号: 44, 期号: 5～6, 页码: 567, 572 Li Wenxue; Hao Qiang; Ding Liang'en; 赵广军; 郑丽和; 徐军; 曾和平收藏 \| 浏览/下载：720/159 \| 提交时间：2009/09/24 continuous-wave (CW) lasers mode-locked lasers yttrium lasers
	High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology the devices have been fabricated in experiment and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.
	Characterization of diode-pumped laser operation of a novel Yb : GSO crystal 期刊论文 OAI收割 ieee j. quantum electron., 2006, 卷号: 42, 期号: 5-6, 页码: 517, 521 Xue YH; Wang CY; Liu QW; Li YF; Chai L; 严成锋; 赵广军; 苏良碧; 徐晓东; Xu J 收藏 \| 浏览/下载：1281/265 \| 提交时间：2009/09/24 continuous-wave (CW) mode locking diode-pumped lasers Q-switched mode locking Yb : GSO crystal
	High-power VCSELs single devices aid 2-D arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：14/0 \| 提交时间：2013/03/25 The high power bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) and laser arrays emitting at 980 nm are reported. Extensive investigations on size scaling behavior of thermal properties of single devices show limits of attainable output characteristics. The maximum continuous wave (CW) output power at room temperature of single devices with aperture size up to 500 m is as high as 1.95 W. The key characteristics such as maximum output power wavelength and thermal resistance are discussed. The bottom-emitting arrays of 16 elements and 200 m aperture size of individual elements show output power of CW 1.35 W at room temperature. The far-field angle is below 17 for all driving current which is very favorable for focusing or collmating optics.