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	Farmland degradation caused by radial diffusion of CO2 leakage from carbon capture and storage 期刊论文 OAI收割 JOURNAL OF CLEANER PRODUCTION, 2020, 卷号: 255, 页码: 8 作者: Ma, Xin; Zhang, Xueyan; Tian, Di \| 收藏 \| 浏览/下载：19/0 \| 提交时间：2020/05/19 Carbon capture and storage CO2 leakage Spring wheat Farmland degradation Spatial threshold
	Farmland degradation caused by radial diffusion of CO2 leakage from carbon capture and storage 期刊论文 OAI收割 JOURNAL OF CLEANER PRODUCTION, 2020, 卷号: 255, 页码: 8 作者: Ma, Xin \| 收藏 \| 浏览/下载：16/0 \| 提交时间：2020/05/19 Carbon capture and storage CO2 leakage Spring wheat Farmland degradation Spatial threshold
	A degradation threshold for irreversible loss of soil productivity: a long-term case study in China SCI/SSCI论文 OAI收割 2011 作者: Gao Y. 收藏 \| 浏览/下载：25/0 \| 提交时间：2012/06/08 degradation threshold ecological restoration landscape disturbance natural recovery species richness ecological thresholds grazing systems restoration vegetation prediction biodiversity landscapes management impacts shifts
	High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology the devices have been fabricated in experiment and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	Effects of carbon nanotubes on processing stability of polyoxymethylene in melt-mixing process 期刊论文 OAI收割 Journal of Physical Chemistry C, 2007, 卷号: 111, 期号: 37, 页码: 13945-13950 Y. Zeng; Z. Ying; J. H. Du; H. M. Cheng 收藏 \| 浏览/下载：25/0 \| 提交时间：2012/04/13 percolation-threshold electrical-conductivity polyethylene composites polymer nanocomposites degradation behavior epoxy composites polycarbonate purification oxidation blends