机构

• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [1]

内容类型

• 会议论文 [1]

发表日期

• 2008 [1]

学科主题

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浏览/检索结果: 共1条，第1-1条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Temperature characteristics of several familiar diode lasers with broad area (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang L.;  Qin L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 Temperature characteristics of several familiar high power diode lasers with broad area  whose wavelength was separately 808 nm  810 nm  940 nm and 980 nm  were analyzed. In order to see the effect the change of the quantum well structure on the characteristic temperatures  different structures were attempted. For the 808 nm structure  we tried different barrier thicknesses. For the 810 nm structure  different cavity lengths were attempted. And we studied the 940 nm and 980 nm also. In this paper  the widths of these devices were all 100 m. Characteristic temperatures of these devices were calculated. The appropriate structure was available for different application. 2008 SPIE.