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• OAI收割 [17]

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• 期刊论文 [16]
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• Physics [2]
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浏览/检索结果: 共17条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Coupled Electronic and Anharmonic Structural Dynamics for Carrier Self-Trapping in Photovoltaic Antimony Chalcogenides 期刊论文  OAI收割 ADVANCED SCIENCE, 2022, 页码: 9 作者:  Tao, Weijian;  Zhu, Leilei;  Li, Kanghua;  Chen, Chao;  Chen, Yuzhong   |  收藏  |  浏览/下载：35/0  |  提交时间：2022/12/07 antimony chalcogenides  carrier self-trapping  electron-phonon interaction   Thermal Electron Behavior in Obliquely Propagating Whistler Waves: MMS Observations in the Solar Wind 期刊论文  OAI收割 GEOPHYSICAL RESEARCH LETTERS, 2021, 卷号: 48, 期号: 14, 页码: 9 作者:  Liu, Z. Y.;  Wang, B.;  Zong, Q. G.;  Yao, S. T.;  Pollock, C. J.   |  收藏  |  浏览/下载：88/0  |  提交时间：2022/07/04 electron acceleration  wave-particle interaction  whistler waves  Landau trapping  phase bunching   Effects of trapping electrons on synergy of lower-hybrid wave and electron cyclotron wave 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2017, 卷号: 66 -   |  收藏  |  浏览/下载：20/0  |  提交时间：2020/10/26 CURRENT DRIVE  TOKAMAK  PLASMA  CONFINEMENT  trapping electrons  synergy effects  lower-hybrid waves  electron cyclotron waves   Toxic effects of chlortetracycline on maize growth, reactive oxygen species generation and the antioxidant response 期刊论文  OAI收割 Environmental Sciences & Ecology, 2012, 卷号: 24, 期号: 6, 页码: 1099-1105 Wen, Bei; Liu, Yu; Wang, Peng; Wu, Tong; Zhang, Shuzhen; Shan, Xiaoquan; Lu, Jingfen 收藏  |  浏览/下载：69/0  |  提交时间：2014/11/27 maize (Zea mays L.)  chlortetracycline  electron paramagnetic resonance (EPR)  spin trapping  hydroxyl radical (center dot OH)  antioxidant enzyme   Study on the pre-chopper in CSNS LEBT 期刊论文  OAI收割 CHINESE PHYSICS C, 2010, 卷号: 34, 期号: 8, 页码: 1122-1126 作者:  欧阳华甫;  Zhang HS(张华顺);  Gong KY(巩克云);  Liu HC(刘华昌);  Wu XB(吴小兵) 收藏  |  浏览/下载：37/0  |  提交时间：2016/06/29 LEBT  pre-chopper  charge neutralization  deflecting voltage  electron-trapping  loaded capacitance   Study on the pre-chopper in CSNS LEBT 期刊论文  OAI收割 中国物理C, 中国物理C, 2010, 2010, 期号: 8, 页码: 1122-1126, 1122-1126 作者:  欧阳华甫;  Zhang HS(张华顺);  Gong KY(巩克云);  Liu HC(刘华昌);  Wu XB(吴小兵)   |  收藏  |  浏览/下载：32/0  |  提交时间：2015/12/14 LEBT  pre-chopper  charge neutralization  deflecting voltage  electron-trapping  loaded capacitance  LEBT  pre-chopper  charge neutralization  deflecting voltage  electron-trapping  loaded capacitance   Mechanism of metal-independent decomposition of organic hydroperoxides and formation of alkoxyl radicals by halogenated quinones 期刊论文  OAI收割 PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 卷号: 104, 期号: 10, 页码: 3698-3702 Zhu, Ben-Zhan; Zhao, Hong-Tao; Kalyanaraman, Balaraman; Liu, Jun; Shan, Guo-Qiang; Du, Yu-Guo; Frei, Balz 收藏  |  浏览/下载：94/0  |  提交时间：2015/09/09 electron spin resonance spin-trapping  2  2  reactive intermediate  metal chelators  5-dichloro-1  5-dichlorosemiquinone anion radical  4-benzoquinone   The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.   ESR evidence on light-induced nitric oxide formation in higher plant chloroplasts 期刊论文  OAI收割 CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 2004, 卷号: 25, 期号: 6, 页码: 1139-1141 作者:  Liu, B;  Zhang, SX;  Song, YG;  Nie, Z;  Tian, Q   |  收藏  |  浏览/下载：17/0  |  提交时间：2019/04/09 Nitric Oxide  Chloroplast  Electron Transfer  Spin-trapping Esr   Electron trapping in multipole magnet 期刊论文  OAI收割 HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2004, 卷号: 28, 期号: 6, 页码: 650-652 作者:  Zhu XW(朱雄伟);  Guo ZY(国智元);  Zhu, XW;  Guo, ZY 收藏  |  浏览/下载：21/0  |  提交时间：2016/06/28 electron cloud  guiding center motion  trapping