机构

• 长春光学精密机械与物... [2]
• 过程工程研究所 [1]

采集方式

• OAI收割 [3]

内容类型

• 会议论文 [2]
• 期刊论文 [1]

发表日期

• 2022 [1]
• 2005 [1]
• 2001 [1]

学科主题

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Excited-State-Modulated Dual-Wavelength Single-Mode Lasing from a Single-Component Organic Microbelt 期刊论文  OAI收割 ADVANCED OPTICAL MATERIALS, 2022, 页码: 7 作者:  De, Jianbo;  Liu, Zhenzhi;  Yin, Fan;  Chen, Jingyao;  Gu, Chunling   |  收藏  |  浏览/下载：43/0  |  提交时间：2022/06/15 excited-state intramolecular proton transfer  multiple-wavelength emission  organic crystals  single-mode lasers   Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China 作者:  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission  amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm  dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.   InGaAs/InGaAsP microdisk lasers grown by GSMBE (EI CONFERENCE) 会议论文  OAI收割 11th International Conference on Molecular Beam Epitaxy, September 11, 2000 - September 15, 2000, Bijing, China Wu G.; Wang X. H.; Zheng Q.; Ren D. C.; Zhang X. D. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 80 A/50 A InGaAs/InGaAsP multiple quantum wells structures grown by gas-source molecular beam epitaxy. We have achieved optically pumped InGaAs/InGaAsP multiquantum wells microdisk lasers at a pump power threshold of Pth = 150 W at pump wavelength = 514.5 nm  which was measured for a 10 m-diameter disk with lasing emission wavelength near = 1.6 m. 2001 Elsevier Science B.V.