中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
地理科学与资源研究所 [1]
计算技术研究所 [1]
长春光学精密机械与物... [1]
烟台海岸带研究所 [1]
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OAI收割 [4]
内容类型
会议论文 [2]
期刊论文 [2]
发表日期
2013 [1]
2012 [1]
2009 [1]
2005 [1]
学科主题
Coastal zo... [1]
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Assessment of comprehensive carrying capacity of coastal zone based on state-space method: A case study of Wenzhou, China
期刊论文
OAI收割
International Journal of Applied Environmental Sciences, 2013, 卷号: 8, 期号: 3, 页码: 325-336
Cai, Yue'yin(1,2,3)
;
Wang, Wei-Wei(2,3)
;
Lin, Yong(2)
;
Shi, Ping(1)
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2015/08/10
Analytic hierarchy process (ahp) - Comprehensive carrying capacities - Ecosystem resilience - Ecosystem stability - Entropy methods - Spatial assessment - Spatial variations - State-space modeling
Monitoring of ground deformation in Jintan salt cavern gas storage area using permanent scatterer interferometry (PSI)
会议论文
OAI收割
Yanshilixue Yu Gongcheng Xuebao/Chinese Journal of Rock Mechanics and Engineering, Chinese, 2012
Li,Langping(李郎平)
;
Lan,Hengxing
;
Li,Xiao
;
Meng,Yunshan
;
Chen,Yu
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2013/03/20
Cyclic variations
Deformation history
Engineering activities
Gas storage
General trends
GPS data
Ground deformations
Human activities
Non
Linearity
Nonlinear behavior
Nonlinear process
PALSAR data
Permanent scatterer interferometries
Salt caverns
Spatial diversity
Spatial patterns
Temporal characteristics
Temporal domain
Stochastic collocation method for interconnect delay estimation in the presence of process variations
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 6, 页码: 3603-3610
作者:
Li Xin
;
Wang, Janet M.
;
Tang Wei-Qing
  |  
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/12/16
process variations
stochastic interconnect model
stochastic collocation method
polynomial chaos expression
Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE)
会议论文
OAI收割
Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China
Fan X. W.
;
Shan C. X.
;
Yang Y.
;
Zhang J. Y.
;
Liu Y. C.
;
Lu Y. M.
;
Shen D. Z.
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2013/03/25
CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time
the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration
the size of dots becomes larger and the density decreases
which is explained by virtue of the surface free energy.