机构

• 金属研究所 [3]
• 长春光学精密机械与物... [1]
• 武汉岩土力学研究所 [1]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [4]
• 会议论文 [2]

发表日期

• 2017 [1]
• 2015 [1]
• 2007 [1]
• 1999 [2]
• 1991 [1]

学科主题

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Mechanical, electronic and thermodynamic properties of hexagonal and orthorhombic U2Mo: A first-principle calculation 期刊论文  OAI收割 PROGRESS IN NUCLEAR ENERGY, 2017, 卷号: 99, 期号: 无, 页码: 110-118 作者:  Chen, Ke;  Tian, Xiaofeng;  Yu, You;  You, Zhenjiang;  Ge, Liangquan 收藏  |  浏览/下载：22/0  |  提交时间：2018/06/04 U2mo  Elastic Properties  Phonon Dispersion Relations  Stress-strain Relations  Density Functional Theory   An Amended Calculation Method for the Additional Stress of High Filling Canals 会议论文  OAI收割 Buenos Aires, ARGENTINA, NOV 15-18, 2015 作者:  Yu, Fei;  Yu, Jing;  Chen, Shanxiong;  Zhang, Yu;  Li, Jian   |  收藏  |  浏览/下载：21/0  |  提交时间：2018/06/05 High filling canal  filling body  additional stress  finite element  stress dispersion  the South-to-North Water Transfer Project   The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.   High temperature creep deformation of an Al-Fe-V-Si alloy 期刊论文  OAI收割 Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing, 1999, 卷号: 259, 期号: 1, 页码: 25-33 L. M. Peng; S. J. Zhu; Z. Y. Ma; J. Bi; H. R. Chen; F. G. Wang 收藏  |  浏览/下载：17/0  |  提交时间：2012/04/14 dispersion-strengthened  aluminum alloys  creep  stress exponent  activation energy  threshold stress  dislocation detachment  relaxation  parameter  dislocation climb  matrix composites  powder-metallurgy  threshold  stress  behavior  aluminum  particles  strength  model   Static and cyclic creep behavior of in situ TiB2 particulate reinforced aluminum composite 期刊论文  OAI收割 Journal of Materials Research, 1999, 卷号: 14, 期号: 12, 页码: 4541-4550 Z. Y. Ma; S. C. Tjong; S. X. Li 收藏  |  浏览/下载：27/0  |  提交时间：2012/04/14 high-temperature creep  metal-matrix composite  oxide dispersion  sic  composites  stress rupture  steady-state  al composite  alloy   EFFECT OF FREQUENCY ON CYCLIC CREEP OF POLYCRYSTALLINE ALUMINUM AT ROOM-TEMPERATURE 期刊论文  OAI收割 Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing, 1991, 卷号: 142, 期号: 1, 页码: 25-33 Z. A. Yang; Z. G. Wang 收藏  |  浏览/下载：23/0  |  提交时间：2012/04/14 ambient-temperature  oxide dispersion  stress rupture  copper  behavior  acceleration  alloy