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	LOTVS: A global collection of permanent vegetation plots 期刊论文 OAI收割 JOURNAL OF VEGETATION SCIENCE, 2022, 卷号: 33, 期号: 2, 页码: 11 作者: Gaia Sperandii, Marta; de Bello, Francesco; Valencia, Enrique; Goetzenberger, Lars; Bazzichetto, Manuele \| 收藏 \| 浏览/下载：31/0 \| 提交时间：2022/09/21 ecoinformatics ecological succession ecosystem stability global scale permanent plots plant communities plant diversity temporal analysis time-series vegetation
	Analysis on Land-Use Change and Its Driving Mechanism in Xilingol, China, during 2000-2020 Using the Google Earth Engine 期刊论文 OAI收割 REMOTE SENSING, 2021, 卷号: 13, 期号: 24, 页码: 23 作者: Ye, Junzhi; Hu, Yunfeng; Zhen, Lin; Wang, Hao; Zhang, Yuxin \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2022/09/21 spatial pattern dynamic change driving factor time-series stability random forest statistical modeling
	Analysis on Land-Use Change and Its Driving Mechanism in Xilingol, China, during 2000-2020 Using the Google Earth Engine 期刊论文 OAI收割 REMOTE SENSING, 2021, 卷号: 13, 期号: 24, 页码: 23 作者: Ye, Junzhi; Hu, Yunfeng; Zhen, Lin; Wang, Hao; Zhang, Yuxin \| 收藏 \| 浏览/下载：33/0 \| 提交时间：2022/09/21 spatial pattern dynamic change driving factor time-series stability random forest statistical modeling
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.