机构

• 兰州化学物理研究所 [2]
• 长春光学精密机械与物... [1]
• 水生生物研究所 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2017 [1]
• 2014 [1]
• 2006 [1]
• 2005 [1]

学科主题

• Biotechnol... [1]
• 材料科学与物理化学 [1]
• 物理化学与绿色催化 [1]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A two-pronged strategy to enhance visible-light-driven overall water splitting via visible-to-ultraviolet upconversion coupling with hydrogen-oxygen recombination inhibition 期刊论文  OAI收割 Applied Catalysis B: Environmental, 2017, 卷号: 212, 页码: 23-31 作者:  Gao W(高薇);  Zhang WY(张文妍);  Lu GX(吕功煊) 收藏  |  浏览/下载：20/0  |  提交时间：2017/07/10 Visible-to-ultraviolet upconversion  Pr3+-Y2SiO5  CaTiO3 catalyst  Inhibition of hydrogen and oxygen  recombination  Overall water splitting  Visible light irradiation   紫外光辐照下钛硅共掺杂类金刚石薄膜微结构的演化 期刊论文  OAI收割 无机材料学报, 2014, 卷号: 29, 期号: 9, 页码: 941-946 作者:  姜金龙;  王琼;  黄浩;  张霞;  王玉宝 收藏  |  浏览/下载：30/0  |  提交时间：2016/10/11 类金刚石薄膜  紫外光辐照  拉曼光谱  红外光谱  结构演化  diamond-like carbon film  ultraviolet light irradiation  Raman spectra  FTIR spectra  microstructural evolution   Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏  |  浏览/下载：32/0  |  提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.   Effects of solar UV radiation on morphology and photosynthesis of filamentous cyanobacterium Arthrospira platensis 期刊论文  OAI收割 APPLIED AND ENVIRONMENTAL MICROBIOLOGY, 2005, 卷号: 71, 期号: 9, 页码: 5004-5013 作者:  Wu, HY;  Gao, KS;  Villafane, VE 收藏  |  浏览/下载：47/0  |  提交时间：2010/10/13 ULTRAVIOLET-B RADIATION  INDUCED DNA-DAMAGE  BLUE-GREEN-ALGA  SPIRULINA-PLATENSIS  NITROGEN-METABOLISM  OZONE DEPLETION  LIGHT  IRRADIATION  REPAIR  PHOTOINHIBITION