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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [2]
长春光学精密机械与物... [1]
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OAI收割 [2]
iSwitch采集 [1]
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期刊论文 [2]
会议论文 [1]
发表日期
2009 [2]
2005 [1]
学科主题
光电子学 [1]
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Blue-violet lasing of optically pumped gan-based vertical cavity surface-emitting laser with dielectric distributed bragg reflectors
期刊论文
iSwitch采集
Journal of lightwave technology, 2009, 卷号: 27, 期号: 1-4, 页码: 55-59
作者:
Zhang, Jiang-Yong
;
Cai, Li-E
;
Zhang, Bao-Ping
;
Li, Shui-Qing
;
Lin, Feng
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Dielectric distributed bragg reflector (dbr)
Gan
Laser lift-off
Vertical cavity surface-emitting laser (vcsel)
Blue-violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors
期刊论文
OAI收割
journal of lightwave technology, 2009, 卷号: 27, 期号: 1-4, 页码: 55-59
Zhang JY
;
Cai LE
;
Zhang BP
;
Li SQ
;
Lin F
;
Shang JZ
;
Wang DX
;
Lin KC
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:169/53
  |  
提交时间:2010/03/08
Dielectric distributed Bragg reflector (DBR)
GaN
laser lift-off
vertical cavity surface-emitting laser (VCSEL)
High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
作者:
Sun Y.
;
Wang L.
;
Wang L.
;
Wang L.
;
Liu Y.
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2013/03/25
We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA
and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature
resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.