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CAS IR Grid
机构
长春光学精密机械与物... [1]
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OAI收割 [1]
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会议论文 [1]
发表日期
2005 [1]
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High-power VCSELs single devices aid 2-D arrays (EI CONFERENCE)
会议论文
OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:
Liu Y.
;
Wang L.
;
Wang L.
;
Wang L.
;
Liu Y.
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提交时间:2013/03/25
The high power bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) and laser arrays emitting at 980 nm are reported. Extensive investigations on size scaling behavior of thermal properties of single devices show limits of attainable output characteristics. The maximum continuous wave (CW) output power at room temperature of single devices with aperture size up to 500 m is as high as 1.95 W. The key characteristics such as maximum output power
wavelength and thermal resistance are discussed. The bottom-emitting arrays of 16 elements and 200 m aperture size of individual elements show output power of CW 1.35 W at room temperature. The far-field angle is below 17 for all driving current
which is very favorable for focusing or collmating optics.