机构

• 长春光学精密机械与物... [8]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [8]

发表日期

• 2021 [3]
• 2019 [3]
• 2018 [1]
• 2014 [1]

学科主题

筛选

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文  OAI收割 Applied Physics Letters, 2021, 卷号: 119, 期号: 16 作者:  K. Jiang;  X. Sun;  Y. Chen;  S. Zhang;  J. Ben   |  收藏  |  浏览/下载：11/0  |  提交时间：2022/06/13 Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current 期刊论文  OAI收割 Science China Information Sciences, 2021, 卷号: 64, 期号: 4 作者:  J. An;  T. Sun;  B. Wang;  J. Xu and S. Li   |  收藏  |  浏览/下载：5/0  |  提交时间：2022/06/13 Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文  OAI收割 Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6 作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben   |  收藏  |  浏览/下载：3/0  |  提交时间：2023/06/14 Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors 期刊论文  OAI收割 Photonics Research, 2019, 卷号: 7, 期号: 3, 页码: 311-317 作者:  X.K.Liu;  Y.X.Chen;  D.B.Li;  S.W.Wang;  C.C.Ting   |  收藏  |  浏览/下载：31/0  |  提交时间：2020/08/24 mos2 atomic layers,large-area,thin-layers,graphene,growth,optoelectronics,hysteresis,Optics   Anomalous Ambipolar Phototransistors Based on All-Inorganic CsPbBr3 Perovskite at Room Temperature 期刊论文  OAI收割 Advanced Optical Materials, 2019, 卷号: 7, 期号: 21, 页码: 9 作者:  Y.T.Zou;  F.Li;  C.Zhao;  J.Xing;  Z.Yu   |  收藏  |  浏览/下载：20/0  |  提交时间：2020/08/24 charge transport,field effect transistors,mobility,perovskites,phototransistors,field-effect transistors,light-emitting-diodes,halide,perovskites,high-efficiency,mobility,performance,transport,tin,Materials Science,Optics   Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor 期刊论文  OAI收割 Advanced Optical Materials, 2019, 卷号: 7, 期号: 23, 页码: 9 作者:  D.Xiang;  T.Liu;  J.Y.Wang;  P.Wang;  L.Wang   |  收藏  |  浏览/下载：19/0  |  提交时间：2020/08/24 2D ReS2 transistors,bolometric modes,low noise equivalent power,fast,photoresponse,photocurrent polarity switching,sub-bandgap,photodetection,field-effect transistors,layer res2,graphene,optoelectronics,semiconductor,mos2,Materials Science,Optics   Study on the Photoresponse Characteristics of Organic Light Emitting Field-Effect Transistors 期刊论文  OAI收割 Journal of Physical Chemistry C, 2018, 卷号: 122, 期号: 27, 页码: 15190-15197 作者:  Li, D. W.;  Hu, Y. S.;  Guo, X. Y.;  Lv, Y.;  Zhang, N.   |  收藏  |  浏览/下载：6/0  |  提交时间：2019/09/17 thin-film transistors  up-conversion devices  phototransistors  performance  photodetectors  ultraviolet  graphene  gain  electroluminescence  transport   Correlating optimal electrode buffer layer thickness with the surface roughness of the active layer in organic phototransistors 期刊论文  OAI收割 Synthetic Metals, 2014, 期号: 193, 页码: 35-40 作者:  Luo X. 收藏  |  浏览/下载：14/0  |  提交时间：2015/04/24