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• 会议论文 [26]

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• 半导体材料 [10]
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浏览/检索结果: 共26条，第1-10条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 A novel strategy to prepare 2D YBO3: Ce3+-Yb3+ nanosheets with enhanced near-infrared (NIR) emission properties 会议论文  OAI收割 Suzhou, PEOPLES R CHINA, 2016-09-23 作者:  Miao, Hui;  Zhang, Guowei;  Hu, Xiaoyun;  Liu, Enzhou;  Bai, Jintao   |  收藏  |  浏览/下载：29/0  |  提交时间：2017/09/20 2d Materials  Ybo3: ce3+-yb3+  Near-infrared (Nir)  Luminescence   Optical properties and crystallization behavior of 45GeS(2)center dot 30Ga(2)S(3)center dot 25Sb(2)S(3) chalcogenide glass 会议论文  OAI收割 SEP 16-20, 2012 作者:  Li, Zhuobin;  Lin, Changgui;  Qu, Guoshun;  Nie, Qiuhua;  Dai, Shixun   |  收藏  |  浏览/下载：15/0  |  提交时间：2021/12/02 2ND-HARMONIC GENERATION  FIBER   Design of visible, infrared dual-channel optical system for space target detection (EI CONFERENCE) 会议论文  OAI收割 2011 International Conference on Electronics and Optoelectronics, ICEOE 2011, July 29, 2011 - July 31, 2011, Dalian, China Zhang X. Y. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 This paper designs a total of 250mm dual-channel optical system  including visible (0.5m0.8m)  infrared (3m5m). The main system is a three-reflection system  and the primary mirror is designed as the first and the third reflecting surface with different figuring. The cooling infrared detector was choiced in infrared channel and achieves 100% cool shield efficiency of luminescence through the second imaging. The main benefits of this design are the large corrected and unvignetted FOV  an easily baffling of stray light  small encumbrance and an easy handing. 2011 IEEE.   Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文  OAI收割 15th international conferene on dynamical processes in excited states of solids, shanghai, peoples r china, aug 01-05, 2005 作者:  Jin P 收藏  |  浏览/下载：159/26  |  提交时间：2010/03/29 quantum dots   Study of infrared luminescence from Er-implanted GaN films 会议论文  OAI收割 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 Chen WD; Song SF; Zhu JJ; Wang XL; Chen CY; Hsu CC 收藏  |  浏览/下载：24/0  |  提交时间：2010/11/15 doping  metalorganic chemical vapor deposition  molecular beam epitaxy  gallium compounds  semiconducting gallium compounds  ERBIUM   Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文  OAI收割 symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002 作者:  Jin P;  Li CM;  Xu B;  Ye XL 收藏  |  浏览/下载：14/2  |  提交时间：2010/10/29 SPECTRUM   Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 会议论文  OAI收割 iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002 Wang QY; Wang JH; Deng HF; Lin LY 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 neutron irradiation  annealing  defects in silicon  SPECTRA   Fabrication of semiconductor optical amplifiers and a novel gain measuring technique 会议论文  OAI收割 6th chinese optoelectronics symposium, kowloon, peoples r china, sep 12-14, 2003 作者:  Yu LJ 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 SPECTRA  LASERS   Strong red light emission from silicon nanocrystals embedded in SIO2 matrix 会议论文  OAI收割 conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002 Chen WD; Wang YQ; Chen CY; Diao HW; Liao XB; Kong GL; Hsu CC 收藏  |  浏览/下载：8/0  |  提交时间：2010/10/29 PHOTOLUMINESCENCE  LUMINESCENCE  SPECTROSCOPY  DEPOSITION   Optical properties of AIInGaN quaternary alloys 会议论文  OAI收割 conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002 Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK 收藏  |  浏览/下载：10/0  |  提交时间：2010/10/29 LIGHT-EMITTING-DIODES  LOCALIZED EXCITONS  LUMINESCENCE  RELAXATION  SILICON  BAND