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浏览/检索结果: 共46条，第1-10条 帮助 限定条件 存缴方式：oaiharvest    内容类型：会议论文    专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Research on the detection of focusing mechanisms 会议论文  OAI收割 4th International Conference on Frontiers of Manufacturing Science and Measuring Technology, ICFMM 2014, June 19, 2014 - June 20, 2014, Guilin, China Chai F. M.; Fan Y. C.; Xin H. W.; Li Z. L. 收藏  |  浏览/下载：10/0  |  提交时间：2015/04/27 High beam quality all-solid-state 1053nm nd: Glass amplifier shaping by LCSLM at repetition frequency (EI CONFERENCE) 会议论文  OAI收割 2nd International Conference on Optical, Electronic Materials and Applications 2012, OEMA 2012, May 25, 2012 - May 26, 2012, Chongqing, China 作者:  Zhang X.;  Qiu J.;  Zhang X.;  Zhang X. 收藏  |  浏览/下载：72/0  |  提交时间：2013/03/25 A laser amplifier of LD pumping Nd: glass with a high beam quality and stability  the modulation degree near field is less than 1.23:1. (2012) Trans Tech Publications  which amplifies nanosecond laser pulse  Switzerland.  has been developed in this paper. Under 1Hz repetition frequency  when the flat top pulse of 3 ns width and 1 nJ energy is injected as the seed pulse  the average output energy of the laser amplifier is 115.3 mJ with a net gain of 109  the energy dispersion degree of the outputting laser is no more than 2%   Detection Capability Analysis of Lunar Retroreflector 会议论文  OAI收割 2011 作者:  Zhao Y.;  Yu J.;  Zhao Y.;  Zhao Y. 收藏  |  浏览/下载：3/0  |  提交时间：2013/03/28 Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films (EI CONFERENCE) 会议论文  OAI收割 Shan C. X.; Zhang J. Y.; Yao B.; Shen D. Z.; Fan X. W.; Choy K. L. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 Zinc oxide (ZnO) films have been prepared on glass substrate in layer-by-layer mode using an atomic-layer deposition (ALD) technique  and a metal-semiconductor-metal structured photodetector has been fabricated on the ZnO films employing interdigital Au as metal contacts. The photodetector shows a cutoff wavelength at around 390 nm and has an obvious responsivity in the whole UVA spectral range. Because the response of the ZnO photodetector covers the whole UV solar irradiation that can reach the earth  the photodetector promises to be useful in monitoring UV solar irradiation to protect people from harm caused by the solar irradiation. Furthermore  the capability of preparing large-area uniform ZnO films of ALD makes it favorable for possible mass production of this kind of photodetector. 2009 American Vacuum Society.   Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文  OAI收割 Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 A set of ZnO/MgZnO heterostructures with well widths  Lw  varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton  while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness  the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.   Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation (EI CONFERENCE) 会议论文  OAI收割 Lu Y. M.; Liang H. W.; Shen D. Z.; Zhang Z. Z.; Zhang J. Y.; Zhao D. X.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/25 In this paper  highly oriented and vertically arranged ZnO nanotubes are prepared on Al2O3 (0 0 0 1) substrate without employing any metal catalysts by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) spectra at room temperature are studied under high excitation densities. Under lower excitation density (60 kW/cm2)  PL spectrum shows that one strong free exciton emission (FE) locates at 3.306 eV. As the excitation density increases up to 200 kW/cm2  a new emission peak (Pn) located at low-energy side of FE is attributed to the spontaneous emission due to an exciton-exciton (Ex-E x) scattering process from two ground state excitons  where one exciton is recombined by emitting a photon and the other is scattered into the excited states of n=2  3  4.... Under excitation density of 300 kW/cm 2  the stimulated emission originating from Ex-E x scattering is obtained. When the excitation density is above 580 kW/cm2  the emission from electron-hole plasma is observed in low-energy side of the P band and indicates a typical superradiation recombination processes with increasing excitation density. 2006 Elsevier B.V. All rights reserved.   Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode 会议论文  OAI收割 2006 Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：3/0  |  提交时间：2013/03/28 Raman spectra and phonon modes of MgxZn1-xO alloy films (EI CONFERENCE) 会议论文  OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Wei Z. P.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Wu C. X.; Zhang J. Y.; Yao B.; Fan X. W. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/25 Hexagonal MgxZn1-xO alloy layers with 0 &le 0.3 have been grown by plasma-assisted molecular beam epitaxy on sapphire (006) and Si (111) substrates. Their crystal structures are characterized by x-ray diffraction spectroscopy. The nonresonant and resonant Raman spectra were measured using 488 nm line from Ar+ laser  and 325 nm line from He-Cd laser by backscattering geometry. Four Raman modes (E2 high  LO  TO  multiphonon processes) were observed in the nonresonant Raman spectra of hexagonal MgxZn1-xO with different Mg contents. The optical phonon frequencies were found to display one-mode behaviour for all the samples since no separate ZnO- and MgO-like modes were observed. The long-wavelength frequencies of ZnO-like optical phonons measured in the resonant Raman spectra can be expressed as linear functions of x. These behaviours can be explained within a modified random-element-isodisplacement model (MREI). 2006 WILEY-VCH Verlag GmbH Co. KGaA.   Field emission properties of ZnO nanowires (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Meng X. Q.; Shen D. Z.; Zhang J. Y.; Zhao D. X.; Lu Y. M.; Zhang Z. Z.; Fan X. W. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 ZnO nanowires were obtained by using a simple vapor solid process. The length of the nanowires is about 1 m  with diameters ranging from 40 nm to 150 nm. X-ray diffraction (XRD) pattern confirms the nanowires are wurtzite structure with c-axis preferred orientation. Photoluminescence (PL) measurement shows a strong UV emission and a weak visible emission. Field emission (FE) results proved the nanowires have low turn-on voltage and high field enhancement factor  which indicates ZnO nanowire is a suitable candidate for field emission display.   Field emission properties of ZnO nanowires - art. no. 60300E 会议论文  OAI收割 2006 Meng X. Q.; Shen D. Z.; Zhang J. Y.; Zhao D. X.; Lu Y. M.; Zhang Z. Z.; Fan X. W. 收藏  |  浏览/下载：2/0  |  提交时间：2013/03/28