中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
  • 2001 [7]
学科主题
筛选

浏览/检索结果: 共7条,第1-7条 帮助

限定条件    
条数/页: 排序方式:
Multilayer optical fiber coupler 专利  OAI收割
专利号: US6328482, 申请日期: 2001-12-11, 公开日期: 2001-12-11
作者:  
JIAN, BENJAMIN BIN
  |  收藏  |  浏览/下载:16/0  |  提交时间:2019/12/26
A study on 4,4 '-diaminobenzene sulfonanilide (DABSA) and the properties of dyes derived from DABSA 期刊论文  OAI收割
chemical research in chinese universities, 2001, 卷号: 17, 期号: 1, 页码: 77-87
作者:  
Wu, ZW;  Wang, LM;  Dai, JY;  Wang, SR;  Xiao, JQ
收藏  |  浏览/下载:13/0  |  提交时间:2015/11/10
Formation of AlN nano-fibers 期刊论文  OAI收割
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 3-4, 页码: 187
Chen, H; Cao, YG; Xiang, XW
收藏  |  浏览/下载:6/0  |  提交时间:2013/09/17
Epitaxial growth of SiC on complex substrates 会议论文  OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文  OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/15
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 期刊论文  OAI收割
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 816-819
Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY
收藏  |  浏览/下载:79/6  |  提交时间:2010/08/12
Epitaxial growth of SiC on complex substrates 期刊论文  OAI收割
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 811-815
Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY
收藏  |  浏览/下载:95/9  |  提交时间:2010/08/12