中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 光电子学 [2]
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:  
Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL
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Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文  OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH
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