中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共8条,第1-8条 帮助

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Direct optical observation of DNA clogging motions near controlled dielectric breakdown silicon nitride nanopores 期刊论文  OAI收割
SENSORS AND ACTUATORS B-CHEMICAL, 2021, 卷号: 349, 页码: 7
作者:  
Xie, Wanyi;  Tian, Haibing;  Fang, Shaoxi;  Zhou, Daming;  Liang, Liyuan
  |  收藏  |  浏览/下载:46/0  |  提交时间:2021/11/26
Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact 期刊论文  OAI收割
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 208
作者:  
Huang, Yuqing;  Liao, Mingdun;  Wang, Zhixue;  Guo, Xueqi;  Jiang, Chunsheng
  |  收藏  |  浏览/下载:30/0  |  提交时间:2020/12/16
The substantial dislocation reduction by preferentially passivating etched defect pits in gan epitaxial growth 期刊论文  iSwitch采集
Applied physics express, 2019, 卷号: 12, 期号: 3
作者:  
Hu,Wei;  Die,Junhui;  Wang,Caiwei;  Yan,Shen;  Hu,Xiaotao
收藏  |  浏览/下载:143/0  |  提交时间:2019/05/09
Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots 期刊论文  OAI收割
NANOTECHNOLOGY, 2017, 卷号: 28
作者:  
Liu, Jia;  Liu, Bin;  Zhang, Xisheng;  Guo, Xiaojia;  Liu, Shengzhong (Frank)
  |  收藏  |  浏览/下载:60/0  |  提交时间:2017/10/29
The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer 期刊论文  OAI收割
CrystEngComm, 2017, 卷号: 19, 页码: 4330–4337
作者:  
Gaoqiang Deng;  Yuantao Zhang;  Zhen Huang;  Long Yan;  Pengchong Li
  |  收藏  |  浏览/下载:16/0  |  提交时间:2018/11/30
Influence of adsorption kinetics on stress evolution in magnetron-sputtered SiO2 and SiNx films 期刊论文  OAI收割
j. appl. phys., 2013, 卷号: 114, 期号: 3, 页码: 034305
作者:  
Li, Jingping;  Fang, Ming;  He, Hongbo;  Shao, Jianda;  Li, Zhaoyang
收藏  |  浏览/下载:13/0  |  提交时间:2016/11/28
Thermodynamic effects on the sintered Nd-Fe-B magnets 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 11, 页码: 5400
Li, Z; He, YQ; Hu, BP; Wang, ZX
收藏  |  浏览/下载:11/0  |  提交时间:2013/09/23
ALLOYS  HEAT  
Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 11, 页码: 5450
Qin, Q; Yu, NS; Guo, LW; Wang, Y; Zhu, XL; Chen, H; Zhou, JM
收藏  |  浏览/下载:25/0  |  提交时间:2013/09/24