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CAS IR Grid
机构
西安光学精密机械研究... [2]
长春光学精密机械与物... [1]
近代物理研究所 [1]
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OAI收割 [4]
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专利 [2]
会议论文 [1]
期刊论文 [1]
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2013 [1]
2009 [1]
1974 [1]
1972 [1]
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Irradiation effects of 65 MeV Kr-ions on structure and optical band-gap of nc-Si:H films
期刊论文
OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 卷号: 314, 页码: 158-161
作者:
Zhu, Yabin
;
Wang, Zhiguang
;
Gao, Xing
;
Sun, Jianrong
;
Shen, Tielong
  |  
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2018/07/05
Nc-si Film
Heavy Ion irradiatIon
Structure
Optical Band-gap
Electron transport in polymer-derived amorphous silicon oxycarbonitride ceramics (EI CONFERENCE)
会议论文
OAI收割
作者:
Zhang L.
;
Wang Y.
;
Wang Y.
;
Wang Y.
;
Wang Y.
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2013/03/25
The electron transport behavior of polymer-derived amorphous silicon oxycarbonitride ceramics is studied by measuring their temperature-dependent electrical conductivities. The experimental results are analyzed using theoretical models. The results reveal that the materials exhibit three conduction mechanisms: conduction in extended states
conduction in band tails
and conduction in localized states. Particularly
it is found that in a low-temperature regime
the conduction of the materials follows a band tail hopping mechanism
rather than the previously assumed variable range hopping mechanism. The results also reveal that energy gaps such as EC-E F and EC-EA decrease with increasing pyrolysis temperature. 2009 The American Ceramic Society.
Light emitting semiconductor devices
专利
OAI收割
专利号: GB1342767A, 申请日期: 1974-01-03, 公开日期: 1974-01-03
作者:
-
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收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/24
Halfgeleider-injectielaser met heterostructuur.
专利
OAI收割
专利号: GB1288082A, 申请日期: 1972-09-06, 公开日期: 1972-09-06
作者:
-
  |  
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/26