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Design and fabrication of BaTiO3 crystal thin-film waveguides 会议论文  OAI收割
15th Annual Conference and 4th International Conference of the Chinese Society of Micro-Nano Technology, CSMNT 2013, November 3, 2013 - November 6, 2013, Tianjin, China
作者:  Zhang J.;  Fu X.-H.;  Zhang J.;  Zhang J.
收藏  |  浏览/下载：18/0  |  提交时间：2015/04/27
The growth and optical properties of al-doped ZnO nanofibers using pvp nanofibers as templates by atom layer deposition 会议论文  OAI收割
12th China International Nanoscience and Technology Symposium, and the Nano-Products Exposition, CINSTS 2013, October 27, 2013 - October 31, 2013, Chengdu, China
作者:  Li S.
收藏  |  浏览/下载：21/0  |  提交时间：2015/04/27
Influence of high temperature annealing in nitrogen on upconversion luminescence of -NaYF4: Yb3+, Er3+ hexagonal sub-microplates (EI CONFERENCE) 会议论文  OAI收割
2012 International conference on Function Materials and Nanotechnology, FMN 2012, May 19, 2012 - May 20, 2012, Zhengzhou, China
作者:  Zhao J.
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25
The pure -NaYF4: Yb3+  Er3+ hexagonal sub-microplates were successfully prepared by the combination of coprecipitation and hydrothermal methods using sodium citrate as chelator. The size of them is about 600 nm 400 nm (side length thickness). The obtained sample was divided into two parts and one of them was annealed in nitrogen at 300 C for 2 hours. The crystal structure of the -NaYF4: Yb3+  Er3+ hexagonal sub-microplates before and after annealing treatment is hexagonal phase. Under the excitation of 980 nm diode laser  the upconversion luminescence intensity the sample after annealing is much stronger than that of the sample without annealing treatment. High temperature annealing process improved the crystallization of the sample  resulting in the decrease of the nonradiative relaxation and the enhancement of the upconversion luminescence. (2012) Trans Tech Publications  Switzerland.  
Experimental study on formability of bulk metallic glass as mold for microstructure replication (EI CONFERENCE) 会议论文  OAI收割
作者:  Liu J.;  Lin J.;  Huang Y.;  Liu J.;  Liu J.
收藏  |  浏览/下载：38/0  |  提交时间：2013/03/25
La62Al14Cu12Ni12BMG is introduced as a substitute for silicon which was widely used as mold material for nanofabrication. For the purpose of precise microstructure replication and complete filling  effects of various imprint parameters  including imprint temperature  imprint time and compression load  on formability of La 62Al14Cu12Ni12BMG are studied and discussed. Scanning electron microscope images and results of thermal analysis are used to characterize the filling effect of La62Al 14Cu12Ni12BMG. In particular  correlations between time and thermodynamic properties are presented. Despite of its high viscosity at crystallization temperature and its narrow supercooled liquid region  La62Al14Cu12Ni12BMG is proved to be a durable and promising material which can precisely replicate the patterns of silicon mold and then transfer its own patterns on Ce 69Al10Cu20Co1BMG and PMMA. 2012 Elsevier B.V. All rights reserved.  
Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文  OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H.
收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25
The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.  
Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization - art. no. 60300 会议论文  OAI收割
2006
Huang J. Y.; Ling Z. H. H.; Jing H.; Fu G. Z.; Zhao Y. H.
收藏  |  浏览/下载：9/0  |  提交时间：2013/03/28