中国科学院机构知识库网格系统: 检索

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	Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress 期刊论文 OAI收割 physical review letters, 2010, 卷号: 104, 期号: 6, 页码: art. no. 067405 Ding F; Singh R; Plumhof JD; Zander T; Krapek V; Chen YH; Benyoucef M; Zwiller V; Dorr K; Bester G; Rastelli A; Schmidt OG 收藏 \| 浏览/下载：150/37 \| 提交时间：2010/04/21
	Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文 OAI收割 nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211 作者: Jin P; Ye XL 收藏 \| 浏览/下载：49/0 \| 提交时间：2010/04/11 SCANNING-TUNNELING-MICROSCOPY ANISOTROPY SPECTROSCOPY GROWTH GAAS SURFACES ALAS
	Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy 期刊论文 OAI收割 physica status solidi a-applied research, 2001, 卷号: 188, 期号: 2, 页码: 681-685 Xu SJ; Or CT; Li Q; Zheng LX; Xie MH; Tong SY; Yang H 收藏 \| 浏览/下载：77/12 \| 提交时间：2010/08/12 OPTICAL-TRANSITIONS PHOTOLUMINESCENCE
	Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy 会议论文 OAI收割 4th international conference on nitride semiconductors (icns-4), denver, colorado, jul 16-20, 2001 Xu SJ; Or CT; Li Q; Zheng LX; Xie MH; Tong SY; Yang H 收藏 \| 浏览/下载：12/0 \| 提交时间：2010/11/15 OPTICAL-TRANSITIONS PHOTOLUMINESCENCE
	Energy band and acceptor binding energy of GaN and AlxGa1-xN 会议论文 OAI收割 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Xia JB; Cheah KW; Wang XL; Sun DZ; Kong MY 收藏 \| 浏览/下载：15/0 \| 提交时间：2010/11/15 acceptor binding energy hole effective-mass Hamiltonian wurtzite GaN
	Energy band and acceptor binding energy of GaN and AlxGa1-xN 期刊论文 OAI收割 materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 204-206 Xia JB; Cheah KW; Wang XL; Sun DZ; Kong MY 收藏 \| 浏览/下载：51/0 \| 提交时间：2010/08/12 acceptor binding energy hole effective-mass Hamiltonian wurtzite GaN