机构

• 苏州纳米技术与纳... [133]

采集方式

• OAI收割 [133]

内容类型

• 期刊论文 [130]
• 会议论文 [2]
• 学位论文 [1]

发表日期

• 2018 [3]
• 2017 [4]
• 2016 [39]
• 2015 [15]
• 2014 [16]
• 2013 [16]
• 更多

学科主题

筛选

浏览/检索结果: 共133条，第1-10条 帮助 限定条件 专题：苏州纳米技术与纳米仿生研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition 期刊论文  OAI收割 MATERIALS RESEARCH BULLETIN, 2018 作者:  Xu, Shengrui;  Zhang, Yachao;  Wang, Zhizhe;  Bao, Weimin;  Zhang, Tao   |  收藏  |  浏览/下载：20/0  |  提交时间：2019/03/27 Fluorescent carbon quantum dots synthesized by chemical vapor deposition: An alternative candidate for electron acceptor in polymer solar cells 期刊论文  OAI收割 OPTICAL MATERIALS, 2018 作者:  Liu, Xuguang;  Jia, Husheng;  Chen, Yongkang;  Ma, Chang-Qi(马昌期);  Cui, Bo   |  收藏  |  浏览/下载：102/0  |  提交时间：2019/03/27 Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2018 作者:  Zhao, Yu;  Huang, Yong(黄勇);  Hao, Xiujun;  Teng, Yan;  Wu, Qihua(吴启花)   |  收藏  |  浏览/下载：84/0  |  提交时间：2019/03/27 High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition 期刊论文  OAI收割 Journal of Materials Science: Materials in Electronics, 2017 作者:  Sun, Yurun(孙玉润);  Dong, Jianrong(董建荣);  Yu, Shuzhen(于淑珍);  Zhao, Yongming(赵勇明);  He, Yang(何洋)   |  收藏  |  浏览/下载：23/0  |  提交时间：2018/02/05 High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4gate dielectrics 期刊论文  OAI收割 2017 作者:  Li, Shu-Ping;  Zhang, Zhi-Li(张志利）;  Fu, Kai(付凯);  Yu, Guo-Hao(于国浩);  Cai, Yong(蔡勇)   |  收藏  |  浏览/下载：13/0  |  提交时间：2018/02/05 High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 AIP ADVANCES, 2017 作者:  Chen, F;  Sun, SC;  Deng, XG（邓旭光）;  Fu, K（付凯）;  Yu, GH（于国浩）   |  收藏  |  浏览/下载：17/0  |  提交时间：2018/02/05 High-Performance Mid-Wavelength InAs/GaSb Superlattice Infrared Detectors Grown by Production-Scale Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割 IEEE Journal of Quantum Electronics, 2017 作者:  Huang, Yong(黄勇);  Xiong, Min(熊敏);  Wu, Qihua(吴启花);  Dong, Xu;  Zhao, Yingchun   |  收藏  |  浏览/下载：62/0  |  提交时间：2018/02/05 Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 681 作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ 收藏  |  浏览/下载：15/0  |  提交时间：2017/03/11 Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 卷号: 122, 期号: 9 作者:  Liang, F;  Chen, P;  Zhao, DG;  Jiang, DS;  Zhao, ZJ 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11 Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films 期刊论文  OAI收割 CHINESE PHYSICS B, 2016, 卷号: 25, 期号: 2 作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS 收藏  |  浏览/下载：23/0  |  提交时间：2017/03/11