中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 光电子学 [20]
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Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction 期刊论文  OAI收割
physics letters a, 2012, 卷号: 376, 期号: 2012-10-11, 页码: 1067-1071
Liu, B; Lu, YW; Huang, Y; Liu, GP; Zhu, QS; Wang, ZG
收藏  |  浏览/下载:15/0  |  提交时间:2013/03/17
Localized flexible integration of high-efficiency surface enhanced Raman scattering (SERS) monitors into microfluidic channels 期刊论文  OAI收割
lab on a chip, 2011, 卷号: 11, 期号: 19, 页码: 3347-3351
Xu, BB; Ma, ZC; Wang, L; Zhang, R; Niu, LG; Yang, Z; Zhang, YL; Zheng, WH; Zhao, B; Xu, Y; Chen, QD; Xia, H; Sun, HB
收藏  |  浏览/下载:19/0  |  提交时间:2012/02/06
Optical properties of the crescent and coherent applications 期刊论文  OAI收割
optics express, 2011, 卷号: 19, 期号: 9, 页码: 8303-8311
作者:  
Jiang B;  Yan XY
收藏  |  浏览/下载:62/7  |  提交时间:2011/07/06
Experimental investigation on submicron rib waveguide microring/racetrack resonators in silicon-on-insulator 期刊论文  OAI收割
optics communications, 2009, 卷号: 282, 期号: 1, 页码: 22-26
Huang, QZ; Yu, YD; Yu, JZ
收藏  |  浏览/下载:50/0  |  提交时间:2010/03/08
Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors 期刊论文  OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 21, 页码: art. no. 212109
作者:  
Li JB
收藏  |  浏览/下载:112/0  |  提交时间:2010/03/08
Investigation on the structural origin of n-type conductivity in InN films 期刊论文  OAI收割
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载:53/1  |  提交时间:2010/03/08
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文  OAI收割
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhao, YW; Zhang, F; Zhang, R; Dong, ZY; Wei, XC; Zeng, YP; Li, JM
收藏  |  浏览/下载:43/0  |  提交时间:2010/03/09
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文  OAI收割
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H
收藏  |  浏览/下载:50/5  |  提交时间:2010/03/08
An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Gamma point 期刊论文  OAI收割
semiconductor science and technology, 2007, 卷号: 22, 期号: 7, 页码: 769-773
Han GQ (Han Genquan); Yu JZ (Yu Jinzhong)
收藏  |  浏览/下载:64/0  |  提交时间:2010/03/29
Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate 期刊论文  OAI收割
journal of materials science & technology, 2006, 卷号: 22, 期号: 5, 页码: 651-654
Zhao L (Zhao Lei); Zuo YH (Zuo Yuhua); Cheng BW (Cheng Buwen); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming)
收藏  |  浏览/下载:37/0  |  提交时间:2010/04/11