机构

• 半导体研究所 [100]

采集方式

• OAI收割 [100]

内容类型

• 期刊论文 [78]
• 会议论文 [22]

发表日期

• 2017 [1]
• 2013 [1]
• 2012 [1]
• 2011 [13]
• 2010 [7]
• 2009 [4]
• 更多

学科主题

• 光电子学 [100]

筛选

浏览/检索结果: 共100条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth 期刊论文  OAI收割 JOURNAL OF LIGHTWAVE TECHNOLOGY, 2017, 卷号: 35, 期号: 24, 页码: 5306-5310 作者:  Zhi Liu;  Fan Yang;  Wenzhou Wu;  Hui Cong;  Jun Zheng 收藏  |  浏览/下载：46/0  |  提交时间：2018/07/02 Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth 期刊论文  OAI收割 applied physics letters, Applied Physics Letters, 2013, 2013, 卷号: 103, 103, 期号: 15, 页码: 152109, 152109 作者:  Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang   |  收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09 Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire 期刊论文  OAI收割 journal of alloys and compounds, 2012, 卷号: 544, 页码: 94-98 Zhao, D.G; Jiang, D.S; Wu, L.L; Le, L.C; Li, L; Chen, P; Liu, Z.S; Zhu, J.J; Wang, H; Zhang, S.M; Yang, H 收藏  |  浏览/下载：18/0  |  提交时间：2013/05/07 Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As 期刊论文  OAI收割 ieee international conference on group iv photonics gfp, 2011, 页码: 314-316 Hu, Weixuan; Cheng, Buwen; Xue, Chunlai; Su, Shaojian; Liu, Zhi; Li, Yaming; Wang, Qiming 收藏  |  浏览/下载：49/0  |  提交时间：2012/06/13 Epitaxial growth  Germanium  Indium  Photonics  Semiconducting silicon compounds  Silicon   Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique 期刊论文  OAI收割 guangdianzi jiguang/journal of optoelectronics laser, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033 Zhou, Zhi-Wen; He, Jing-Kai; Li, Cheng; Yu, Jin-Zhong 收藏  |  浏览/下载：46/0  |  提交时间：2012/06/13 Atomic force microscopy  Atomic spectroscopy  Chemical vapor deposition  Diffraction  Epitaxial growth  Germanium  Raman spectroscopy  Semiconducting silicon compounds  Substrates  Surface morphology  Ultrahigh vacuum  X ray diffraction   High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013 Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM 收藏  |  浏览/下载：60/3  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  MIRRORS  GAN  WAVELENGTHS   Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文  OAI收割 applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471 Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM 收藏  |  浏览/下载：97/7  |  提交时间：2011/07/05 Germanium tin alloys  Germanium buffer  Surface morphology evolution  Mass transport  SURFACE  GROWTH  EVOLUTION  DECAY   Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 068103 作者:  Su SJ 收藏  |  浏览/下载：93/5  |  提交时间：2011/07/07 GeSn alloys  strained  strain-relaxed  molecular beam epitaxy   Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 68103 Wang, W; Su, SJ; Zheng, J; Zhang, GZ; Zuo, YH; Cheng, BW; Wang, QM 收藏  |  浏览/下载：17/0  |  提交时间：2012/02/06 GeSn alloys  strained  strain-relaxed  molecular beam epitaxy   Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46 Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM 收藏  |  浏览/下载：71/4  |  提交时间：2011/07/05 Thermal stability  Molecular beam epitaxy  Germanium tin alloys  Germanium  MOLECULAR-BEAM EPITAXY  LOW-TEMPERATURE  SEMICONDUCTORS  GE(001)2X1