机构

• 半导体研究所 [54]

采集方式

• OAI收割 [54]

内容类型

• 期刊论文 [48]
• 会议论文 [6]

发表日期

• 2011 [6]
• 2010 [4]
• 2009 [3]
• 2008 [2]
• 2007 [4]
• 2006 [5]
• 更多

学科主题

• 半导体材料 [54]

筛选

浏览/检索结果: 共54条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84328 Huang SL; Wu Y; Zhu XF; Li LX; Wang ZG; Wang LZ; Lu GQ 收藏  |  浏览/下载：29/0  |  提交时间：2011/07/05 SILICON NANOWIRES  SURFACE MIGRATION  NANOSTRUCTURES  CATALYST   Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311 作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY 收藏  |  浏览/下载：52/5  |  提交时间：2011/07/05 SELF-ORGANIZED ISLANDS  MOLECULAR-BEAM-EPITAXY  OPTICAL-PROPERTIES  SURFACES  EMISSION  DENSITY  SIZE   Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575 作者:  Xu B;  Jin P;  Ye XL 收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05 Atom force microscopy  Nanostructures  Molecular-beam epitaxy  Nanomaterials  Semiconducting gallium arsenide  QUANTUM-DOTS  ANODIC ALUMINA  ARRAYS  PLACEMENT  INAS   Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716 作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG 收藏  |  浏览/下载：41/3  |  提交时间：2011/07/05 HIGH-PRESSURE SYNTHESIS  VAPOR-DEPOSITION  NUCLEATION  EMISSION  DIAMOND  GROWTH   Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文  OAI收割 journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者:  Pan X 收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14 CHEMICAL-VAPOR-DEPOSITION  PHASE EPITAXY  ALN INTERLAYERS  FILMS  STRESS  LAYERS  DISLOCATIONS  REDUCTION  DENSITY  DIODES   Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate 期刊论文  OAI收割 chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502 Wu M; Zeng YP; Wang JX; Hu Q 收藏  |  浏览/下载：49/2  |  提交时间：2011/07/05 LIGHT-EMITTING-DIODES  ULTRAVIOLET  GROWTH   Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device 期刊论文  OAI收割 solar energy materials and solar cells, 94 (2): feb 2010, 2010, 卷号: 94, 期号: 2, 页码: 390-394 Yan J (Yan Jun); Sun CH (Sun Chenghua); Tan; FR (Tan Furui); Hu XJ (Hu Xiujie); Chen P (Chen Ping); Qu SC (Qu Shengchun); Zhou SY (Zhou Shuyun); Xu JK (Xu Jingkun) 收藏  |  浏览/下载：129/28  |  提交时间：2010/04/13 PEDOT films  ITO  Electrochemically polymerized  Solar Cells  Energy conversion efficiencies  POLYMER SOLAR-CELLS  INDIUM-TIN OXIDE  CONJUGATED POLYMER  ELECTROCHEMICAL COPOLYMERIZATION  CONDUCTING POLYMERS  3,4-ETHYLENEDIOXYTHIOPHENE  NUCLEATION  ELECTRODES  PRECURSOR  ANODES   Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis 期刊论文  OAI收割 science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005 Huang TM (Huang TianMao); Chen NF (Chen NuoFu); Zhang XW (Zhang XingWang); Bai YM (BaiYiMing); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Zhang H (Zhang Han); Wang Y (Wang Yu); Wang YS (Wang YanShuo); Yang XL (Yang XiaoLi) 收藏  |  浏览/下载：25/0  |  提交时间：2010/11/14 polycrystalline silicon thin film  aluminum induced crystallization  (111) preferred orientation  INDUCED LAYER-EXCHANGE  AMORPHOUS-SILICON  SOLAR-CELLS  GLASS  SI  ORIENTATION  MODEL   Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Li YB (Li Yanbo) 收藏  |  浏览/下载：148/33  |  提交时间：2010/06/04 Reflection high-energy electron diffraction  Atomic force microscopy  Molecular beam epitaxy  Zinc compounds  Semiconducting II-VI materials   Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文  OAI收割 diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376 Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.) 收藏  |  浏览/下载：26/0  |  提交时间：2010/12/28 Cubic boron nitride  Doping  Ion beam assisted deposition  X-ray photoelectron spectroscopy  RAY PHOTOELECTRON-SPECTROSCOPY  VAPOR-DEPOSITION  SI  NUCLEATION  GROWTH