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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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半导体研究所 [46]
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期刊论文 [40]
会议论文 [6]
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2021 [1]
2018 [1]
2016 [1]
2011 [4]
2010 [2]
2009 [4]
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半导体材料 [25]
光电子学 [6]
半导体物理 [5]
微电子学 [2]
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Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate
期刊论文
OAI收割
JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 卷号: 60, 期号: 3, 页码: 35510
作者:
Zhou, Yuan
;
Zhao, Youwen
;
Xie, Hui
;
Shen, Guiying
;
Liu, Jingming
;
Yang, Jun
  |  
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2022/09/30
The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition
期刊论文
OAI收割
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488
作者:
Li Fangzheng
;
Wang Lianshan
;
Zhao Guijuan
;
Meng Yulin
;
Li Huijie
;
Chen Yanan
;
Yang Shaoyan
;
Jin Peng
;
Wang Zhanguo
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/11/15
Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy
期刊论文
OAI收割
superlattices and microstructures, 2016, 卷号: 93, 页码: 27-31
Xin Rong
;
Xinqiang Wang
;
Guang Chen
;
Jianhai Pan
;
Ping Wang
;
Huapeng Liu
;
Fujun Xu
;
Pingheng Tan
;
Bo Shen
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2017/03/16
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
OAI收割
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
期刊论文
OAI收割
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M
;
Wang, XL
;
Pan, X
;
Xiao, HL
;
Wang, CM
;
Hou, QF
;
Wang, ZG
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2012/01/06
GaN
MOCVD
Si(111)
AlN
VAPOR-PHASE EPITAXY
LAYERS
SUBSTRATE
MOCVD
STRESS
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
收藏
  |  
浏览/下载:80/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804
Guo X (Guo Xi)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Jiang DS (Jiang De-Sheng)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Wang H (Wang Hui)
;
Zhang SM (Zhang Shu-Ming)
;
Qiu YX (Qiu Yong-Xin)
;
Xu K (Xu Ke)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2010/08/17
in-plane grazing incidence x-ray diffraction
gallium nitride
mosaic structure
biaxial strain
CHEMICAL-VAPOR-DEPOSITION
LATTICE-CONSTANTS
ALN
Application of Raman spectroscopy in carbon nanotube-based polymer composites
期刊论文
OAI收割
chinese science bulletin, CHINESE SCIENCE BULLETIN, 2010, 2010, 卷号: 55, 55, 期号: 35, 页码: 3978-3988, 3978-3988
作者:
Gao Y
;
Li LY
;
Tan PH
;
Liu LQ
;
Zhang Z
  |  
收藏
  |  
浏览/下载:100/2
  |  
提交时间:2011/07/05
Raman spectroscopy
carbon nanotube
composites
CNT macroarchitecture
RADIAL BREATHING MODE
DIAMETER DISTRIBUTION
WALL
SCATTERING
FIBERS
SENSORS
STRESS
FUNCTIONALIZATION
NANOCOMPOSITES
OXIDATION
Raman Spectroscopy
Carbon Nanotube
Composites
Cnt Macroarchitecture
Radial Breathing Mode
Diameter Distribution
Wall
Scattering
Fibers
Sensors
Stress
Functionalization
Nanocomposites
Oxidation
Characterization of thick gan films directly grown on wet-etching patterned sapphire by hvpe
期刊论文
iSwitch采集
Chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: 4
作者:
Hu Qiang
;
Wei Tong-Bo
;
Duan Rui-Fei
;
Yang Jian-Kun
;
Huo Zi-Qiang
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/05/12