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  • 半导体物理 [3]
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Comparison of cooling rates for hot carriers in GaAs AlAs quantum wells based on macroscopic and microscopic phonon models 期刊论文  OAI收割
physical review b, 1999, 卷号: 59, 期号: 20, 页码: 13184-13195
Zhang JZ; Zhu BF; Huang J
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Numerical evaluation of energy loss rate for hot carriers in quantum wells 期刊论文  OAI收割
superlattices and microstructures, 1998, 卷号: 23, 期号: 1, 页码: 87-92
Zhu BF; Huang K; Zhang JZ
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DEFECT MODEL OF PHOTOCONVERSION BY OXYGEN IN SEMIINSULATING GAAS 期刊论文  OAI收割
physical review b, 1991, 卷号: 44, 期号: 24, 页码: 13435-13445
ZHONG XF
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