机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [7]
• 会议论文 [4]

发表日期

• 2008 [2]
• 2003 [3]
• 2002 [1]
• 2001 [4]
• 1998 [1]

学科主题

• 半导体材料 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 8, 页码: 3063-3066 Fan, HB; Yang, SY; Zhang, PF; Wei, HY; Liu, XL; Jiao, CM; Zhu, QS; Chen, YH; Wang, ZG 收藏  |  浏览/下载：80/3  |  提交时间：2010/03/08 SINGLE-CRYSTAL  PHASE EPITAXY  SAPPHIRE  NANORODS  FILMS   Experimental investigation of slow light phenomenon in photonic crystal waveguide line defect laser 会议论文  OAI收割 international workshop on metamaterials, nanjing, peoples r china, nov 09-12, 2008 Xing MX; Ren G; Chen W; Zhou WJ; Wang HL; Chen LH; Zheng WH 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 MODE   High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文  OAI收割 symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002 Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY 收藏  |  浏览/下载：31/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  ION-SCATTERING SPECTROSCOPY  LATTICE POLARITY  SINGLE-CRYSTALS  FILMS  POLARIZATION  GAN(0001)  SURFACES  GROWTH  DIODES   Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 1-8 Luo MC; Li JM; Wang QM; Sun GS; Wang L; Li GR; Zeng YP; Lin LY 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 infrared reflectivity  Raman  sapphire substrate  X-ray diffraction  chemical vapor deposition  SiC  GAN  FILMS   Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 247, 期号: 3-4, 页码: 255-260 Tan LW; Wang QY; Wang J; Yu YH; Liu ZL; Lin LY 收藏  |  浏览/下载：50/0  |  提交时间：2010/08/12 heteroepitaxial growth  gamma-Al2O3  silicon  silicon on insulator  FILMS  SI  DEPOSITION  AL2O3   GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 242, 期号: 3-4, 页码: 389-394 Zhou JP; Chen NF; Zhang FQ; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 Auger electron spectroscopy  X-ray diffraction  X-ray photoelectron spectroscopy  ion beam epitaxy  semiconducting gadolinium silicide  SEMICONDUCTING SILICIDES  MAGNETIC SEMICONDUCTORS  TRANSITION  INSULATOR  SILICON  FILMS   Epitaxial growth of SiC on complex substrates 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 optical microscopy  X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  SAPPHIRE  DEPOSITION  FILMS   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 816-819 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：79/6  |  提交时间：2010/08/12 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS   Epitaxial growth of SiC on complex substrates 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 811-815 Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY 收藏  |  浏览/下载：95/9  |  提交时间：2010/08/12 optical microscopy  X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  SAPPHIRE  DEPOSITION  FILMS