机构

• 半导体研究所 [12]

采集方式

• OAI收割 [9]
• iSwitch采集 [3]

内容类型

• 期刊论文 [8]
• 会议论文 [4]

发表日期

• 2009 [2]
• 2008 [2]
• 2007 [1]
• 2006 [1]
• 2005 [2]
• 1999 [4]
• 更多

学科主题

• 半导体物理 [6]
• 半导体材料 [2]
• 光电子学 [1]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Weak measurement of qubit oscillations with strong response detectors: violation of the fundamental bound imposed on linear detectors 期刊论文  iSwitch采集 Physical review b, 2009, 卷号: 79, 期号: 7, 页码: 5 作者:  Jiao, HuJun;  Li, Feng;  Wang, Shi-Kuan;  Li, Xin-Qi 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 Mesoscopic systems  Photodetectors  Quantum computing  Single electron transistors   Weak measurement of qubit oscillations with strong response detectors: Violation of the fundamental bound imposed on linear detectors 期刊论文  OAI收割 physical review b, 2009, 卷号: 79, 期号: 7, 页码: art. no. 075320 Jiao HJ; Li F; Wang SK; Li XQ 收藏  |  浏览/下载：371/122  |  提交时间：2010/03/08 mesoscopic systems  photodetectors  quantum computing  single electron transistors   Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/09 GAS SENSORS  HEMT STRUCTURES  MOBILITY  TEMPERATURE  TRANSISTORS  GROWTH  MOCVD  LAYER   Solid-state qubit measurement with single electron transistors 会议论文  OAI收割 2nd international workshop on solid-state quantum computing/mini-school on quantum information science, taipei, taiwan, jun 23-27, 2008 Jiao, HJ; Li, F; Wang, SK; Li, XQ 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 solid-state qubit  single-electron-transistor  quantum measurement  number-resolved master equation   High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文  OAI收割 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29 BUFFER LAYER  STRESS  PHOTODIODES  REDUCTION  DETECTORS  SAPPHIRE  EPITAXY  GROWTH   Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.242108 作者:  Zhang XW 收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  CHEMICAL-VAPOR-DEPOSITION  ENERGY-GAP  100 GAAS  INASSB  INAS1-XSBX  ALLOYS  INSB  TRANSPORT  LAYERS   Frequency dependence of junction capacitance of gan p-i-n uv detectors 期刊论文  iSwitch采集 Solid-state electronics, 2005, 卷号: 49, 期号: 7, 页码: 1135-1139 作者:  Kang, Y;  Xu, YH;  Zhao, DG;  Fang, JX 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12 Capacitance-frequency characteristics  Deep level  Gan  Uv detector   Frequency dependence of junction capacitance of GaN p-i-n UV detectors 期刊论文  OAI收割 solid-state electronics, 2005, 卷号: 49, 期号: 7, 页码: 1135-1139 作者:  Zhao DG 收藏  |  浏览/下载：55/35  |  提交时间：2010/03/17 capacitance-frequency characteristics   Structural and photoelectric studies on double barrier quantum well infrared detectors 期刊论文  iSwitch采集 Solid-state electronics, 1999, 卷号: 43, 期号: 4, 页码: 723-727 作者:  Wu, WG;  Jiang, DS;  Cui, LQ;  Song, CY;  Zhuang, Y 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文  OAI收割 2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 strip detectors  silicon detectors  annealing  simulation  irradiation  N-EFF  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS