中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2009 [4]
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Distribution of dislocations in gasb and insb epilayers grown on gaas (001) vicinal substrates 期刊论文  iSwitch采集
Journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: 4
作者:  
Li, Meicheng;  Qiu, Yongxin;  Liu, Guojun;  Wang, Yutian;  Zhang, Baoshun
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Shape stability of inas self-assembled islands on vicinal gaas(001) substrates 期刊论文  iSwitch采集
Chemical physics letters, 2009, 卷号: 468, 期号: 4-6, 页码: 249-252
作者:  
Liang, S.;  Zhu, H. L.;  Wang, W.
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Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文  OAI收割
journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903
Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC
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Shape stability of InAs self-assembled islands on vicinal GaAs(001) substrates 期刊论文  OAI收割
chemical physics letters, 2009, 卷号: 468, 期号: 4-6, 页码: 249-252
作者:  
Liang S
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